APT10021JFLL_04 ADPOW [Advanced Power Technology], APT10021JFLL_04 Datasheet
APT10021JFLL_04
Manufacturer Part Number
APT10021JFLL_04
Description
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Manufacturer
ADPOW [Advanced Power Technology]
Datasheet
1.APT10021JFLL_04.pdf
(5 pages)
STATIC ELECTRICAL CHARACTERISTICS
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
MAXIMUM RATINGS
Power MOS 7
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7
and Q
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
Symbol
Symbol
T
R
V
BV
V
V
J
I
V
I
E
E
DS(on)
GS(th)
I
,T
GSS
I
DSS
GSM
P
DM
T
DSS
AR
I
GS
AR
D
AS
DSS
D
STG
L
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
g
. Power MOS 7
POWER MOS 7
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
Pulsed Drain Current
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current (V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (V
Gate Threshold Voltage (V
®
is a new generation of low loss, high voltage, N-Channel
®
combines lower conduction and switching losses
1
1
(Repetitive and Non-Repetitive)
• Increased Power Dissipation
• Easier To Drive
• Popular SOT-227 Package
•
DS
C
FAST RECOVERY BODY DIODE
APT Website - http://www.advancedpower.com
= V
C
= 25°C
1
= 25°C
4
GS
GS
2
DS
DS
, I
®
= ±30V, V
GS
D
= 1000V, V
= 800V, V
by significantly lowering R
(V
= 5mA)
R
= 0V, I
GS
FREDFET
= 10V, 18.5A)
DS
D
= 250µA)
GS
= 0V)
GS
= 0V, T
= 0V)
All Ratings: T
C
= 125°C)
1000V 37A 0.210
DS(ON)
C
= 25°C unless otherwise specified.
1000
MIN
3
APT10021JFLL
-55 to 150
ISOTOP
1000
3600
5.56
TYP
±30
±40
148
694
300
37
37
50
®
0.210
1000
±100
MAX
250
5
"UL Recognized"
G
Amps
Amps
Ohms
Watts
UNIT
W/°C
UNIT
Volts
Volts
Volts
Volts
mJ
°C
µA
nA
Ω Ω Ω Ω Ω
D
S
Related parts for APT10021JFLL_04
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Manufacturer:
ADPOW [Advanced Power Technology]
Datasheet:
Part Number:
Description:
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
Manufacturer:
ADPOW [Advanced Power Technology]
Datasheet:
Part Number:
Description:
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Manufacturer:
ADPOW [Advanced Power Technology]
Datasheet:
Part Number:
Description:
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Manufacturer:
ADPOW [Advanced Power Technology]
Datasheet:
Part Number:
Description:
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Manufacturer:
ADPOW [Advanced Power Technology]
Datasheet:
Part Number:
Description:
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Manufacturer:
ADPOW [Advanced Power Technology]
Datasheet:
Part Number:
Description:
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
Manufacturer:
ADPOW [Advanced Power Technology]
Datasheet:
Part Number:
Description:
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Manufacturer:
ADPOW [Advanced Power Technology]
Datasheet:
Part Number:
Description:
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Manufacturer:
ADPOW [Advanced Power Technology]
Datasheet:
Part Number:
Description:
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Manufacturer:
ADPOW [Advanced Power Technology]
Datasheet:
Part Number:
Description:
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Manufacturer:
ADPOW [Advanced Power Technology]
Datasheet:
Part Number:
Description:
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Manufacturer:
ADPOW [Advanced Power Technology]
Datasheet:
Part Number:
Description:
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS
Manufacturer:
ADPOW [Advanced Power Technology]
Datasheet:
Part Number:
Description:
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Manufacturer:
ADPOW [Advanced Power Technology]
Datasheet:
Part Number:
Description:
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
Manufacturer:
ADPOW [Advanced Power Technology]
Datasheet:
APT10021JFLL_04 Summary of contents
Page 1
POWER MOS 7 ® Power MOS new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 ® and Q . Power MOS 7 combines ...
Page 2
DYNAMIC CHARACTERISTICS Symbol Characteristic C Input Capacitance iss C Output Capacitance oss C Reverse Transfer Capacitance rss Q 3 Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...
Page 3
RC MODEL Junction temp. ( ”C) 0.0244 Power 0.133 (Watts) 0.0218 Case temperature FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 180 V DS > (ON DS(ON) MAX. 160 250 µSEC. PULSE TEST @ <0.5 % DUTY CYCLE ...
Page 4
OPERATION HERE 100 LIMITED (ON =+25° =+150°C SINGLE PULSE 100 V , DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS FIGURE 10, MAXIMUM SAFE OPERATING AREA 37A D ...
Page 5
Typical Performance Curves 10% t d(on 90% 5% 10% Switching Energy Figure 18, Turn-on Switching Waveforms and Definitions APT30DF60 D.U.T. Figure 20, Inductive Switching Test Circuit r = 4.0 (.157) (2 ...