APT6013JFLL_04 ADPOW [Advanced Power Technology], APT6013JFLL_04 Datasheet

APT6013JFLL_04

Manufacturer Part Number

APT6013JFLL_04

Description

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

Manufacturer

ADPOW [Advanced Power Technology]

Datasheet

1.APT6013JFLL_04.pdf (5 pages)

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STATIC ELECTRICAL CHARACTERISTICS

Power MOS 7

enhancement mode power MOSFETS. Both conduction and switching

losses are addressed with Power MOS 7

and Q

along with exceptionally fast switching speeds inherent with APT's

patented metal gate structure.

• Lower Input Capacitance

• Lower Miller Capacitance

• Lower Gate Charge, Qg

MAXIMUM RATINGS

Symbol

DS(on)

GS(th)

GSS

DSS

GSM

DSS

STG

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

. Power MOS 7

POWER MOS 7

Parameter

Drain-Source Voltage

Continuous Drain Current @ T

Pulsed Drain Current

Gate-Source Voltage Continuous

Gate-Source Voltage Transient

Total Power Dissipation @ T

Linear Derating Factor

Operating and Storage Junction Temperature Range

Lead Temperature: 0.063" from Case for 10 Sec.

Avalanche Current

Repetitive Avalanche Energy

Single Pulse Avalanche Energy

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

Drain-Source On-State Resistance

Zero Gate Voltage Drain Current (V

Gate-Source Leakage Current (V

Gate Threshold Voltage (V

is a new generation of low loss, high voltage, N-Channel

POWER MOS 7

combines lower conduction and switching losses

(Repetitive and Non-Repetitive)

• Increased Power Dissipation

• Easier To Drive

• Popular SOT-227 Package

•

FAST RECOVERY BODY DIODE

APT Website - http://www.advancedpower.com

= V

= 25°C

, I

= ±30V, V

by significantly lowering R

= 600V, V

= 480V, V

= 2.5mA)

= 0V, I

FREDFET

= 10V, I

= 250µA)

= 0V)

= 0V, T

= 0V)

= 19.5A)

All Ratings: T

= 125°C)

DS(ON)

600V 39A 0.130

= 25°C unless otherwise specified.

MIN

600

APT6013JFLL

-55 to 150

2500

3.68

TYP

±30

±40

600

156

460

300

ISOTOP

0.130

1000

±100

MAX

250

"UL Recognized"

Amps

Ohms

Watts

UNIT

W/°C

UNIT

Volts

°C

µA

Ω Ω Ω Ω Ω

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APT6013JFLL_04 Summary of contents

Page 1

POWER MOS 7 POWER MOS 7 ® Power MOS new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 ® and Q . Power ...

Page 2

DYNAMIC CHARACTERISTICS Symbol Characteristic C Input Capacitance iss C Output Capacitance oss C Reverse Transfer Capacitance rss Q 3 Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller ") Charge gd t Turn-on Delay Time d(on) t Rise ...

Page 3

RC MODEL Junction temp. (°C) 0.0260 Power 0.0584 (watts) 0.185 Case temperature. (°C) FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 160 V DS > (ON (ON)MAX. 140 250µSEC. PULSE TEST @ <0.5 % DUTY CYCLE 120 ...

Page 4

OPERATION HERE LIMITED (ON =+25° =+150°C SINGLE PULSE 100 V , DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS FIGURE 10, MAXIMUM SAFE OPERATING AREA 39A ...

Page 5

Switching Energy Figure 18, Turn-on Switching Waveforms and Definitions APT30DF60 D.U.T. Figure 20, Inductive Switching Test Circuit r = 4.0 (.157) (2 places) ® ...

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