APT6025BVFR_05 ADPOW [Advanced Power Technology], APT6025BVFR_05 Datasheet
APT6025BVFR_05
Manufacturer Part Number
APT6025BVFR_05
Description
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
Manufacturer
ADPOW [Advanced Power Technology]
Datasheet
1.APT6025BVFR_05.pdf
(4 pages)
MAXIMUM RATINGS
STATIC ELECTRICAL CHARACTERISTICS
Power MOS V
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V
also achieves faster switching speeds through optimized gate layout.
• Fast Recovery Body Diode
• Lower Leakage
• Faster Switching
Symbol
Symbol
T
R
V
BV
V
V
J
I
I
V
E
E
DS(on)
I
GS(th)
,T
I
P
DSS
GSS
GSM
T
DSS
I
DM
AR
GS
AR
AS
D
DSS
D
L
STG
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
Pulsed Drain Current
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current (V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (V
Gate Threshold Voltage (V
®
is a new generation of high voltage N-Channel enhancement
POWER MOS V
1
1
(Repetitive and Non-Repetitive)
DS
C
APT Website - http://www.advancedpower.com
1
= V
C
= 25°C
• Avalanche Energy Rated
• TO-247 or Surface Mount
= 25°C
4
GS
GS
D
2
3
DS
DS
, I
= ±30V, V
PAK Package
GS
D
(V
= 600V, V
= 480V, V
= 0V, I
= 1mA)
GS
= 10V, 12.5A)
D
DS
= 250µA)
GS
GS
= 0V)
®
= 0V)
= 0V, T
All Ratings: T
C
FREDFET
= 125°C)
APT6025BVFR
600V 25A 0.250
APT6025SVFR
C
®
= 25°C unless otherwise specified.
MIN
600
APT6025BVFR_SVFR
2
TO-247
-55 to 150
1300
2.96
TYP
600
100
±30
±40
370
300
25
25
30
0.250
1000
±100
MAX
250
4
D
G
3
PAK
FREDFET
Ohms
Amps
Watts
Amps
UNIT
W/°C
UNIT
Volts
Volts
Volts
Volts
mJ
µA
nA
°C
Ω Ω Ω Ω Ω
D
S
Related parts for APT6025BVFR_05
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Manufacturer:
ADPOW [Advanced Power Technology]
Datasheet:
Part Number:
Description:
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Manufacturer:
ADPOW [Advanced Power Technology]
Datasheet:
Part Number:
Description:
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
Manufacturer:
ADPOW [Advanced Power Technology]
Datasheet:
Part Number:
Description:
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Manufacturer:
ADPOW [Advanced Power Technology]
Datasheet:
Part Number:
Description:
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Manufacturer:
ADPOW [Advanced Power Technology]
Datasheet:
Part Number:
Description:
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Manufacturer:
ADPOW [Advanced Power Technology]
Datasheet:
Part Number:
Description:
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Manufacturer:
ADPOW [Advanced Power Technology]
Datasheet:
Part Number:
Description:
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Manufacturer:
ADPOW [Advanced Power Technology]
Datasheet:
Part Number:
Description:
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Manufacturer:
ADPOW [Advanced Power Technology]
Datasheet:
Part Number:
Description:
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Manufacturer:
ADPOW [Advanced Power Technology]
Datasheet:
Part Number:
Description:
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Manufacturer:
ADPOW [Advanced Power Technology]
Datasheet:
Part Number:
Description:
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Manufacturer:
ADPOW [Advanced Power Technology]
Datasheet:
Part Number:
Description:
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS
Manufacturer:
ADPOW [Advanced Power Technology]
Datasheet:
Part Number:
Description:
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Manufacturer:
ADPOW [Advanced Power Technology]
Datasheet:
Part Number:
Description:
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
Manufacturer:
ADPOW [Advanced Power Technology]
Datasheet:
APT6025BVFR_05 Summary of contents
Page 1
POWER MOS V Power MOS new generation of high voltage N-Channel enhancement ® mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching ...
Page 2
DYNAMIC CHARACTERISTICS Symbol Characteristic C Input Capacitance iss C Output Capacitance oss C Reverse Transfer Capacitance rss Q 3 Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t (on) Turn-on Delay Time d t Rise ...
Page 3
V GS =7V, 10V & 15V 100 150 200 V , DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS > (ON ...
Page 4
Typical Performance Curves 100 50 OPERATION HERE LIMITED (ON =+25°C 0 =+150°C SINGLE PULSE 0 100 V , DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS FIGURE 10, MAXIMUM SAFE ...