MSA-0800-GP4 HP [Agilent(Hewlett-Packard)], MSA-0800-GP4 Datasheet

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MSA-0800-GP4

Manufacturer Part Number
MSA-0800-GP4
Description
Cascadable Silicon Bipolar MMIC Amplifier
Manufacturer
HP [Agilent(Hewlett-Packard)]
Datasheet
Cascadable Silicon Bipolar
MMIC Amplifier
Technical Data
Features
• Usable Gain to 6.0 GHz
• High Gain:
• Low Noise Figure:
Description
The MSA-0800 is a high perfor-
mance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) chip. This MMIC is de-
signed for use as a general purpose
50
can be used as a high gain transis-
tor below this frequency. Typical
applications include narrow and
broad band IF and RF amplifiers in
commercial, industrial and military
applications.
Typical Biasing Configuration
5965-9595E
IN
32.5 dB Typical at 0.1 GHz
23.5 dB Typical at 1.0 GHz
3.0 dB Typical at 1.0 GHz
C
gain block above 0.5 GHz and
block
MSA
V
d
= 7.8 V
RFC (Optional)
R
C
bias
block
The MSA-series is fabricated using
HP’s 10 GHz f
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metalli-
zation to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
The recommended assembly
procedure is gold-eutectic die
attach at 400 C and either wedge
or ball bonding using 0.7 mil gold
wire.
section, “Chip Use”.
V
OUT
CC
[1]
>
10
See APPLICATIONS
V
T
6-410
, 25 GHz f
MAX
,
MSA-0800
Chip Outline
Note:
1. Refer to the APPLICATIONS section
“Silicon MMIC Chip Use” for additional
information.
[1]

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MSA-0800-GP4 Summary of contents

Page 1

... High Gain: 32.5 dB Typical at 0.1 GHz 23.5 dB Typical at 1.0 GHz • Low Noise Figure: 3.0 dB Typical at 1.0 GHz Description The MSA-0800 is a high perfor- mance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) chip. This MMIC is de- signed for use as a general purpose 50 gain block above 0.5 GHz and can be used as a high gain transis- tor below this frequency ...

Page 2

... The recommended operating current range for this device mA. Typical performance as a function of current is on the following page performance of the chip is determined by packaging and testing 10 devices per wafer in a dual ground configuration. Part Number Ordering Information Part Number MSA-0800-GP4 [1] Absolute Maximum 80 mA 750 mW ...

Page 3

... MSA-0800 Typical Scattering Parameters S 11 Freq. GHz Mag Ang 0.1 .65 –17 0.2 .61 –31 0.4 .50 –54 0.6 .43 –70 0.8 .38 –81 1.0 .34 –95 1.5 .31 –110 20.9 2.0 .32 –124 18.3 2.5 .33 –129 16.3 3.0 .34 –138 14.4 3.5 .36 –146 12.8 4.0 .36 –155 11.3 5.0 .35 177 6.0 .43 150 Note: 1. S-parameters are de-embedded from 70 mil package measured data using the package model found in the DEVICE MODELS section. ...

Page 4

... MSA-0800 Chip Dimensions GROUND INPUT 394 m 15.5 mil Unless otherwise specified, tolerances are 0.5 mils. Chip thickness is 114 m /4.5 mil. Bond Pads are 41 m /1.6 mil typical on each side. Note 1: Output contact is made by die attaching the backside of the die. 305 m 12 mil OPTIONAL [1] OUTPUT ...

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