UFB200FA60P_10 VISHAY [Vishay Siliconix], UFB200FA60P_10 Datasheet
UFB200FA60P_10
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UFB200FA60P_10 Summary of contents
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Insulated Ultrafast Rectifier Module, 200 A SOT-227 PRODUCT SUMMARY per module °C F(AV ABSOLUTE MAXIMUM RATINGS PARAMETER Cathode to anode voltage Continuous forward current per diode Single pulse forward current ...
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UFB200FA60P Vishay Semiconductors ELECTRICAL SPECIFICATIONS (T PARAMETER Cathode to anode breakdown voltage Forward voltage Reverse leakage current Junction capacitance DYNAMIC RECOVERY CHARACTERISTICS (T PARAMETER Reverse recovery time Peak recovery current Reverse recovery charge THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Junction to ...
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Tj = 175° 125° 25°C 1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 Forward Voltage Drop - V Fig Typical Forward Voltage Drop Characteristics (Per Diode) 1 ...
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UFB200FA60P Vishay Semiconductors 200 150 DC 100 50 Square wave (D=0.50) 80% rated Vr applied see note 100 150 Average Forward Current - I Fig Maximum Allowable Case Temperature vs. Average Forward Current (Per ...
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Document Number: 94566 For technical questions within your region, please contact one of the following: Revision: 22-Jul-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, Insulated Ultrafast Rectifier Module, 200 200V 50A, 125° 50A, 25°C 10 ...
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UFB200FA60P Vishay Semiconductors (1) dI /dt - rate of change of current F through zero crossing ( peak reverse recovery current RRM ( reverse recovery time measured rr from zero crossing point of ...
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Notes • Dimensioning and tolerancing per ANSI Y14.5M-1982 • Controlling dimension: millimeter Document Number: 95036 Revision: 28-Aug-07 SOT-227 38.30 (1.508) 37.80 ...
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... Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’ ...