2mbi150ua-120 Fuji Electric holdings CO.,Ltd, 2mbi150ua-120 Datasheet - Page 2

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2mbi150ua-120

Manufacturer Part Number
2mbi150ua-120
Description
1200v / 150a 2 In One-package Igbt Module U-series
Manufacturer
Fuji Electric holdings CO.,Ltd
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2MBI150UA-120
Manufacturer:
FUJI
Quantity:
1 000
Part Number:
2MBI150UA-120
Quantity:
50
2MBI150UA-120
Characteristics (Representative)
400
300
200
100
400
300
200
100
100.0
10.0
0
0
1.0
0.1
0
0
0
Collector current vs. Collector-Emitter voltage (typ.)
Collector current vs. Collector-Emitter voltage (typ.)
Capacitance vs. Collector-Emitter voltage (typ.)
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage : VCE [V]
1
1
VGE=0V, f= 1M Hz, Tj= 25°C
VGE=20V 15V
10
VGE=15V / chip
T j=25°C
Tj= 25°C / chip
2
2
T j=125°C
3
3
12V
20
Cies
Cres
Coes
4
4
10V
8V
30
5
5
400
300
200
100
10
8
6
4
2
0
0
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Collector current vs. Collector-Emitter voltage (typ.)
0
5
0
150
Gate - Emitter voltage : VGE [ V ]
Vcc=600V, Ic=150A, Tj= 25°C
Collector-Emitter voltage : VCE [V]
Dynamic Gate charge (typ.)
1
10
Gate charge : Qg [ nC ]
Tj= 125°C / chip
300
Tj=25°C / chip
VGE=20V
2
450
15
15V
3
IGBT Module
600
VCE
20
VGE
Ic=300A
Ic=150A
Ic=75A
750
4
12V
10V
8V
900
25
5

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