p2003bdg Niko Semiconductor Co., Ltd., p2003bdg Datasheet

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p2003bdg

Manufacturer Part Number
p2003bdg
Description
N-channel Logic Level Enhancement Mode Field Effect Transistor
Manufacturer
Niko Semiconductor Co., Ltd.
Datasheet

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NIKO-SEM
ABSOLUTE MAXIMUM RATINGS (T
THERMAL RESISTANCE RATINGS
1
2
ELECTRICAL CHARACTERISTICS (T
REV 1.0
PRODUCT SUMMARY
Pulse width limited by maximum junction temperature.
Duty cycle  1%
Gate-Source Voltage
Pulsed Drain Current
Avalanche Current
Operating Junction & Storage Temperature Range
Drain-Source Voltage
Continuous Drain Current
Avalanche Energy
Power Dissipation
Junction-to-Case
Junction-to-Ambient
Case-to-Heatsink
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
V
(BR)DSS
25V
THERMAL RESISTANCE
PARAMETER
PARAMETERS/TEST CONDITIONS
R
20mΩ
DS(ON)
1
1
N-Channel Logic Level Enhancement
32A
I
D
Mode Field Effect Transistor
C
= 25 °C Unless Otherwise Noted)
C
SYMBOL
V
= 25 °C, Unless Otherwise Noted)
V
I
(BR)DSS
I
I
D(ON)
GS(th)
GSS
DSS
T
T
L = 0.1mH
T
T
C
C
C
C
SYMBOL
= 25 °C
= 100 °C
= 25 °C
= 100 °C
G
R
R
R
CS
JC
JA
V
STATIC
DS
= 20V, V
V
V
V
TEST CONDITIONS
V
V
S
D
DS
DS
DS
GS
DS
1
= V
= 0V, V
= 10V, V
= 0V, I
= 20V, V
TYPICAL
GS
GS
SYMBOL
, I
T
0.7
= 0V, T
V
j
V
E
D
I
, T
D
I
P
GS
I
DM
AS
DS
GS
D
AS
= 250A
GS
D
= 250A
GS
stg
= ±20V
= 10V
= 0V
J
= 125 °C
MAXIMUM
Halogen-Free & Lead-Free
-55 to 150
3.6
75
MIN TYP MAX
LIMITS
110
1.0
25
±20
110
25
32
20
23
27
35
14
LIMITS
P2003BDG
1.8
TO-252 (DPAK)
±250
1. GATE
2. DRAIN
3. SOURCE
Sep-09-2009
250
2.5
25
UNITS
°C / W
UNITS
UNIT
mJ
°C
W
V
V
A
nA
A
V
A

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p2003bdg Summary of contents

Page 1

... TEST CONDITIONS STATIC 0V, I (BR)DSS GS(th 0V, V GSS 20V DSS V = 20V 10V, V D(ON P2003BDG Halogen-Free & Lead-Free SYMBOL LIMITS ± 110 -55 to 150 j ...

Page 2

... Continuous Current 1 Forward Voltage Reverse Recovery Time Reverse Recovery Charge 1 Pulse test : Pulse Width  300 sec, Duty Cycle  2%. 2 Independent of operating temperature. REMARK: THE PRODUCT MARKED WITH “P2003BDG”, DATE CODE or LOT # REV 1.0 Mode Field Effect Transistor V = 4.5V DS(ON) V ...

Page 3

... V =10V GS 1.00E+02 I =15A D 0.00E+ 100 125 150 1.0E+03 1.0E+02 1.0E+01 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E- P2003BDG TO-252 (DPAK) Halogen-Free & Lead-Free Transfer Characteristics T =125° =25° =-20° 1.0 2.0 3.0 4.0 5 Gate-To-Source Voltage(V) GS Capacitance Characteristic Drain-To-Source Voltage(V) ...

Page 4

... DC 0 100 0.0001 Transient Thermal Response Curve 1.E-03 1.E- Square Wave Pulse Duration[sec P2003BDG TO-252 (DPAK) Halogen-Free & Lead-Free SINGLE PULSE R = 3.6 ˚ C/W θJC T =25 ˚ 0.001 0.01 0.1 1 Single Pulse Time(s) Note 1.Duty cycle 2.Rth = 3 ...

Page 5

... N-Channel Logic Level Enhancement NIKO-SEM REV 1.0 Mode Field Effect Transistor 5 P2003BDG TO-252 (DPAK) Halogen-Free & Lead-Free Sep-09-2009 ...

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