p2003bdg Niko Semiconductor Co., Ltd., p2003bdg Datasheet - Page 3

• Manufacturer Part Number: p2003bdg
• Description: N-channel Logic Level Enhancement Mode Field Effect Transistor
• Manufacturer: Niko Semiconductor Co., Ltd.

NIKO-SEM
100
R
R
R
R
R
R
R
R
R
REV 1.0
80
60
40
20
DS(ON)
DS(ON)
DS(ON)
DS(ON)
DS(ON)
DS(ON)
DS(ON)
DS(ON)
DS(ON)
10
0
8
6
4
2
0
0
0
╳
╳
╳
╳
╳
╳
╳
╳
╳
I
V
D
DS
=15A
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
=15V
On-Resistance VS Temperature
V
Output Characteristics
Gate charge Characteristics
Characteristics
G S
-50
V
= 10V
1
DS
3
T
, Drain-To-Source Voltage(V)
J
Qg , Total Gate Charge
-25
, Junction Temperature(˚C)
0
2
6
25
N-Channel Logic Level Enhancement
50
3
9
V
V
G S
Mode Field Effect Transistor
V
G S
GS
= 4.5V
75
= 6V
= 3V
100
12
4
V
I
D
GS
=15A
=10V
125
150
15
5
1.0E+03
1.0E+02
1.0E+00
1.0E+01
1.0E-02
1.0E-03
1.0E-04
3
100
1.0E-01
8.00E+02
7.00E+02
6.00E+02
5.00E+02
4.00E+02
3.00E+02
2.00E+02
1.00E+02
0.00E+00
80
60
40
20
0
0.0
Source-Drain Diode Forward Voltage
0
0.2
T
1.0
J
=25° C
Capacitance Characteristic
Transfer Characteristics
V
0.4
GS
V
5
2.0
V
SD
T
, Gate-To-Source Voltage(V)
DS
J
, Source-To-Drain Voltage(V)
=125° C
, Drain-To-Source Voltage(V)
3.0
10
0.6
T
J
=-20° C
Halogen-Free & Lead-Free
4.0
15
0.8
T
J
=150° C
P2003BDG
5.0
1.0
20
TO-252 (DPAK)
6.0
T
Sep-09-2009
J
=25° C
1.2
25
7.0
Coss
Crss
Ciss
30
1.4
8.0