mn3666a Panasonic Corporation of North America, mn3666a Datasheet - Page 3

• Manufacturer Part Number: mn3666a
• Description: 7500-bit High-speed High-resolution Ccd Linear Image Sensor
• Manufacturer: Panasonic Corporation of North America

<Inspection conditions>
MN3666A
Power supply current
IS test pin leak current
Photo storage gate leak current
Output gate pin leak current
•
•
•
•
•
•
•
•
•
•
Signal output set up time *
Signal output hold time
* OS output level: =500mV
Shift register clock input capacitance
Reset clock input capacitance
Shift clock input capacitance
*ø
Responsivity
Photo response non-uniformity
Bit non-uniformity
Saturation output voltage
Saturation exposure
Dark signal output voltage
Dark signal output non-uniformity
Shift register total transfer efficiency
Dynamic range
Modulation transfer function
* The definitions of the parameters are given in Note 1) to Note 10) on the following page.
to F=10).
(channel 1) and the output of both OS
signals should be respectively through unity gain differential amplifiers with input impedances of 100k Ohms or more, carrying
out zero level DC clamping of each channel.
Ta=25˚C
V
f
Light source: Daylight type fluorescent lamp
These specifications apply to the 7500 valid pixels excluding the dummy pixels D1 to D4.
Optical system: A slit with an aperture dimensions of 20mm
This parameters are inspected by signal multiplex with channels 1 and 2 which correspond to the output of both OS
C
DC characteristics
AC characteristics
Optical Characteristics
Electrical Characteristics
Clock input capacitance (Ta=–20 to + 60˚C)
1A
DD
=f
, ø
=V
R
=1MHz, T
2A
IS
, ø
=V
Parameter
Parameter
Parameter
1B
Parameter
SUB
, and ø
=12V (DC), V
int
(accumulation time)=10ms
2B
are respectively connected to ø
OG
=V
PG
Symbol
C , C
C , C
Symbol
Symbol
Symbol
DSNU
PRNU
MTF
=4.5V (DC), V
STTE
BNU
V
1A
1B
V
DR
C
C
I
I
I
t
t
2
SE
I
R
DRK
DD
PG
OG
OS
OW
SAT
IS
and DS
R
S
R
2A
2B
2
V
V
Note 1
Note 2
Note 3
Note 4
Note 5
Dark condition, see Note 6
Dark condition, see Note 7
Note 8
Note 9
Note 10
V =12V
f=1MHz
(channel 2) respectively. Before multiplex the channels 1 and 2, the OS and DS
DD
DD
IN
=+12V
=+5V
ø
1D
H
=10V (pulse), V
, ø
2D
, ø
1C
, and ø
20mm is used at a distance of 200mm from the sensor (equivalent
Condition
Condition
Condition
Condition
2C
SH
internally.
=V
RH
=12V (pulse)
CCD Linear Image Sensor
min
min
1.00
0.45
min
min
1.6
—
—
—
—
—
—
—
—
—
—
92
—
—
—
—
—
typ
2800
1.40
0.74
600
100
typ
typ
typ
1.9
0.5
0.2
20
—
—
—
30
30
15
—
—
—
65
max
max
max
max
750
150
2.2
3.0
2.0
—
—
30
50
50
50
15
—
—
—
—
—
1
8
1
and DS
V/lx· s
Unit
Unit
Unit
Unit
mA
mA
mV
mV
ns
ns
pF
pF
pF
lx· s
A
A
%
%
%
%
V
1