DG2011DX-T1 VISHAY [Vishay Siliconix], DG2011DX-T1 Datasheet - Page 3

• Manufacturer Part Number: DG2011DX-T1
• Description: Low-Voltage, Low rON, Single SPDT Analog Switch In SC-89 Package
• Manufacturer: VISHAY [Vishay Siliconix]

Notes:
a.
b.
c.
d.
e.
f.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
Document Number: 70102
S-50509—Rev. E, 21-Mar-05
SPECIFICATIONS (V+ = 3 V)
Analog Switch
Analog Signal Range
On-Resistance
r
r
Switch Off Leakage Current
Switch Off Leakage Current
Channel-On Leakage Current
Digital Control
Input High Voltage
Input Low Voltage
Input Capacitance
Input Current
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Break-Before-Make Time
Charge Injection
Off-Isolation
Crosstalk
N
Channel-On Capacitance
Power Supply
Power Supply Range
Power Supply Current
Power Consumption
ON
ON
O
, N
Room = 25°C, Full = as determined by the operating suffix.
Typical values are for design aid only, not guaranteed nor subject to production testing.
The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
Guarantee by design, nor subjected to production test.
V
Guaranteed by 5-V leakage testing, not production tested.
Match
Flatness
IN
C
Off Capacitance
= input voltage to perform proper function.
d
d
Parameter
d
d
d
d
Symbol
V
I
Flatness
INL
I
I
C
NO
I
C
COM(off)
COM(on)
I
V
NO(off)
X
OIRR
Dr
NC(off)
NO(off)
t
V
t
Q
NC(off)
C
V
r
r
t
BBM
OFF
COM
TALK
V+
P
C
ON
ON
or I
ON
, V
I+
INH
INL
INJ
ON
ON
in
C
NC
INH
,
,
,
V
NO
V+ = 3.3 V, V
Otherwise Unless Specified
V+ = 3 V, "10%, V
C
or V
L
R
R
V+ = 3.3 V, V
V+ = 3.3 V, V
V
V+ = 2.7 V, V
= 1 nF, V
L
L
NC
= 50 W C
= 50 W, C
V
V
Test Conditions
IN
IN
2 7 V V
= 2.0 V, R
I
I
= 0 or V+, f = 1 MHz
= 0 or V+, f = 1 MHz
V
NO
NO
NO
V
COM
GEN
IN
, I
, I
, V
NC
NC
L
L
= 0 or V+
NO
NO
COM
= 3 V/1 V
= 5 pF f = 1 MHz
= 5 pF, f = 1 MHz
NC
= 0 V, R
V
V
L
= 50 mA
= 50 mA
, V
, V
IN
IN
IN
= 300 W, C
= V
= 0.9 V/1.5 V
NC
NC
= 0 or V+
= 0 or V+
= 0.4 or 2.0 V
0 9 V/1 5 V
COM
= 1 V/3 V
= 1 V/3 V
GEN
= 1 V/3 V
= 0 W
L
= 35 pF
e
Temp
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
a
Min
−10
−10
−10
1.6
1.8
−1
−1
−1
0
1
1
b
Vishay Siliconix
−40 to 85_C
Limits
Typ
0.01
−62
−68
1.8
0.2
45
29
16
28
84
4
2
c
Max
DG2011
V+
2.7
2.9
0.2
0.5
0.4
5.5
1.0
3.3
10
10
10
75
77
59
62
1
1
1
1
www.vishay.com
b
Unit
mW
nA
pF
mA
pC
dB
dB
pF
pF
mA
ns
V
W
V
V
V
3