SS8550T SECOS [SeCoS Halbleitertechnologie GmbH], SS8550T Datasheet

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SS8550T

Manufacturer Part Number
SS8550T
Description
PNP Silicon General Purpose Transistor
Manufacturer
SECOS [SeCoS Halbleitertechnologie GmbH]
Datasheet
01-Jun-2002 Rev. A
http://www.SeCoSGmbH.com
CLASSIFICATION OF h
ELECTRICAL CHARACTERISTICS ( Tamp.=25
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Rank
Range
FEATURES
Collector Current
Operating & storage junction temperature
Power dissipation
Collector-base voltage
V
T
P
Parameter
I
Elektronische Bauelemente
CM
j
(BR)CBO
, T
CM
stg
: -1.5 A
: 1 W
: - 55
: - 40 V
O
C ~ + 150
FE(1)
85-160
B
O
C
A suffix of "-C" specifies halogen & lead-free
V
V
V
V
V
Symbol
(BR)CBO
(BR)CEO
(BR)EBO
CE
BE
I
I
I
H
H
f
CBO
CEO
EBO
(sat)
(sat)
T
FE(1)
FE(2)
RoHS Compliant Product
120-200
O
C unless otherwise specified)
Ic= -100
Ic= -0.1mA, I
I
V
V
V
V
V
I
I
V
f=
E
C
C
CB
CE
EB
CE
CE
CE
C
=-100
=-800 mA, I
=-800 mA, I
Test
30MHz
= -5V ,
=-40 V , I
=-20V , I
=-1V, I
=-1V, I
=-10V, I
μ
μ
conditions
A, I
A, I
C
C
= -100m A
= -800mA
I
B
C
B
B
C
E
=-80m A
=0
=-80m A
= -50mA
=0
B
=0
C
=0
2
E
=0
=0
General Purpose Transistor
1
2
3
160-300
1
3
Any changing of specification will not be informed individual
SS8550T
D
MIN
-40
100
-25
PNP Silicon
-5
85
40
TO-92
TYP
1. EMITTER
3
2. BASS
1 2
.
COLLECTOR
3
MAX
300-400
-0.5
-1.2
400
-0.1
-0.1
-0.1
E
UNIT
MHz
μ
μ
μ
V
V
V
V
V
A
A
A
Page 1 of 2

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SS8550T Summary of contents

Page 1

... =-1V -800mA FE( (sat) I =-800 mA (sat) I =-800 mA =-10V 30MHz B C 120-200 SS8550T PNP Silicon General Purpose Transistor TO- EMITTER 2 2. BASS COLLECTOR MIN TYP MAX - - ...

Page 2

... B -10 V BE(sat CE(sat) -0.1 -10 -100 -1000 -0.0 Figure 4. Base-Emitter On Voltage 1000 f=1MHz 100 10 -100 -1000 -1 Figure 6. Current Gain Bandwidth Product SS8550T PNP Silicon General Purpose Transistor -10 -100 -1000 I [mA], COLLECTOR CURRENT C Figure 2. DC current Gain V = -1V CE -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 V [V], BASE-EMITTER VOLTAGE ...

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