SS8550T SECOS [SeCoS Halbleitertechnologie GmbH], SS8550T Datasheet - Page 2

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SS8550T

Manufacturer Part Number
SS8550T
Description
PNP Silicon General Purpose Transistor
Manufacturer
SECOS [SeCoS Halbleitertechnologie GmbH]
Datasheet
01-Jun-2002 Rev. A
http://www.SeCoSGmbH.com
Typical Characteristics
Elektronische Bauelemente
-10000
Figure 3. Base-Emitter Saturation Voltage
-1000
-0.5
-0.4
-0.3
-0.2
-0.1
100
-100
10
Figure 5. Collector Output Capacitance
-10
1
-1
-0.1
Collector-Emitter Saturation Voltage
Figure 1. Static Characteristic
V
CE
V
CB
-0.4
[V], COLLECTOR-EMITTER VOLTAGE
[V], COLLECTOR-BASE VOLTAGE
I
C
[mA], COLLECTOR CURRENT
-1
-10
-0.8
-10
V
V
BE(sat)
CE(sat)
-1.2
-100
-100
-1.6
I
I
I
I
I
I
I
B
B
f=1MHz
I
B
B
B
B
B
I
E
=-2.0mA
=-1.5mA
=-0.5mA
=-3.5mA
B
=-1.0mA
=-4.0mA
=-3.0mA
=0
=-2.5mA
I
C
=10I
-1000
B
-1000
-2.0
1000
Figure 6. Current Gain Bandwidth Product
1000
-100
100
-0.1
100
-10
10
10
1
-1
-0.1
-0.0
-1
Figure 4. Base-Emitter On Voltage
Figure 2. DC current Gain
General Purpose Transistor
-0.2
V
I
I
C
BE
C
[mA], COLLECTOR CURRENT
-1
[mA], COLLECTOR CURRENT
[V], BASE-EMITTER VOLTAGE
-0.4
-10
Any changing of specification will not be informed individual
SS8550T
-10
-0.6
PNP Silicon
-0.8
-100
-100
V
-1.0
V
V
CE
CE
CE
= -1V
=-10V
= -1V
-1000
-1000
-1.2
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