hy62v8100b Hynix Semiconductor, hy62v8100b Datasheet - Page 5

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hy62v8100b

Manufacturer Part Number
hy62v8100b
Description
128k X8 Bit 3.3v Low Power Cmos Slow Sram
Manufacturer
Hynix Semiconductor
Datasheet

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AC CHARACTERISTICS
Vcc = 3.0V~3.6V, T
AC TEST CONDITIONS
T
Input Pulse Level
Input Rise and Fall Time
Input and Output Timing Reference Level
Output Load
AC TEST LOADS
Rev 13 / Apr. 2001
10
11
12
13
14
15
16
17
18
19
#
1
2
3
4
5
6
7
8
9
A
= 0 C to 70 C / -25 C to 85 C (E) / -25¡ É to 85¡ É ( I), unless otherwise specified
Note : 1 Including jig and scope capacitance
Symbol
tRC
tAA
tACS
tOE
tCLZ
tOLZ
tCHZ
tOHZ
tOH
tWC
tCW
tAW
tAS
tWP
tWR
tWHZ
tDW
tDH
tOW
READ CYCLE
WRITE CYCLE
Read Cycle Time
Address Access Time
Chip Select Access Time
Output Enable to Output Valid
Chip Select to Output in Low Z
Output Enable to Output in Low Z
Chip Deselection to Output in High Z
Out Disable to Output in High Z
Output Hold from Address Change
Write Cycle Time
Chip Selection to End of Write
Address Valid to End of Write
Address Set-up Time
Write Pulse Width
Write Recovery Time
Write to Output in High Z
Data to Write Time Overlap
Data Hold from Write Time
Output Active from End of Write
A
= 0 C to 70 C / -25 C to 85 C (E) / -25¡ É to 85¡ É ( I), unless otherwise specified
tCLZ,tOLZ,tCHZ,tOHZ,tWHZ
Others
Parameter
Parameter
CL(1)
TTL
Min.
70
10
10
70
60
60
50
30
5
0
0
0
0
0
0
5
-
-
-
-70
0.4V to 2.2V
5ns
1.5V
CL =
CL = 100pF + 1TTL Load
Max.
70
70
40
30
30
25
-
-
-
-
-
-
-
-
-
-
-
-
-
5pF + 1TTL Load
Min.
85
10
10
85
70
70
55
40
5
0
0
0
0
0
0
5
-
-
-
-85
Value
Max.
HY62V8100B Series
85
85
45
30
30
30
-
-
-
-
-
-
-
-
-
-
-
-
-
Min
100
100
10
15
80
80
75
45
10
5
0
0
0
0
0
0
-
-
-
-10
Max.
100
100
50
30
30
35
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
4
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns

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