hy62v8100b Hynix Semiconductor, hy62v8100b Datasheet - Page 8

• Manufacturer Part Number: hy62v8100b
• Description: 128k X8 Bit 3.3v Low Power Cmos Slow Sram
• Manufacturer: Hynix Semiconductor

DATA RETENTION ELECTRIC CHARACTERISTIC
T
V
I
tCDR
tR
Notes:
1. Typical values are under the condition of T
2. tRC is read cycle time.
DATA RETENTION TIMING DIAGRAM 1
DATA RETENTION TIMING DIAGRAM 2
Rev 13 / Apr. 2001
CCDR
Sym
A
DR
=0 C to 70 C / -25 C to 85 C (E) / -25¡ É to 85¡ É ( I)
2.2V
3.0V
VDR
CS1
VSS
VCC
3.0V
CS2
VDR
0.4V
VSS
VCC
Vcc for Data Retention
Data
Retention
Current
Chip Deselect to Data
Retention Time
Operating Recovery Time
Parameter
HY62V8100B
HY62V8100B-E
HY62V8100B-I
tCDR
tCDR
DATA RETENTION MODE
DATA RETENTION MODE
CS1>VCC-0.2V
CS2<0.2V
/CS1>Vcc-0.2V or CS2<0.2V,
V
Vcc=3.0V,
/CS1>Vcc - 0.2V or CS2<0.2V,
V
See Data Retention Timing
Diagram
IN
IN
A
> Vcc-0.2V or V
> Vcc-0.2V or V
= 25 C.
Test Condition
tR
tR
IN
IN
< Vss+0.2V
> Vss+0.2V
tRC
Min
HY62V8100B Series
2.0
0
-
-
-
(2)
Typ
0.5
0.5
0.5
-
-
-
Max
10
15
15
-
-
-
Unit
7
uA
uA
uA
ns
ns
V