rf2127 RF Micro Devices, rf2127 Datasheet

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rf2127

Manufacturer Part Number
rf2127
Description
Medium Power Linear Amplifier
Manufacturer
RF Micro Devices
Datasheet

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Product Description
The RF2127 is a medium-power, high-efficiency, linear
amplifier IC. The device is manufactured on an advanced
Gallium Arsenide Heterojunction Bipolar Transistor (HBT)
process, and has been designed for use as the final RF
amplifier in 1800MHz digital PCS phone transmitters
requiring
1800MHz and 1900MHz, with over 100mW transmitted
power. It will also function as the driver stage for the
RF2125 high power amplifier. A simple power down func-
tion is included for TDD operation.
Optimum Technology Matching® Applied
Rev A3 010720
Typical Applicat ions
• DECT Cordless Applications
• PCS Communication Systems
Si BJT
Si Bi-CMOS
GND1
VCC2
RF IN
PD
linear
Funct ional Block Diagram
1
2
3
4
ü
amplification
GaAs HBT
SiGe HBT
CIRCUITS
BIAS
2
operating
GaAs MESFET
Si CMOS
8
7
6
5
VCC1
RF OUT
RF OUT
GND2
between
• Commercial and Consumer Systems
• Portable Battery-Powered Equipment
Feat ures
Ordering Infor mat ion
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
• Single 3.0V to 6.5V Supply
• 100mW Linear Output Power
• 25dB Small Signal Gain
• 30% Efficiency
• Digitally Controlled Power Down Mode
• 1500MHz to 1900MHz Operation
RF2127
RF2127 PCBA
MEDIUM POWER LINEAR AMPLIFIER
8° MAX
NOTES:
1. Shaded lead is pin 1.
2. All dimensions are excluding flash, protrusions or burrs.
3. Lead coplanarity: 0.005 with respect to datum "A".
4. Package surface finish: Matte (Charmilles #24~27).
0° MIN
0.200
0.192
xxx
xxx
Package St yle: SOIC-8
Medium Power Linear Amplifier
Fully Assembled Evaluation Board
0.0500
0.0164
0.160
0.152
0.248
0.232
0.0100
0.0076
0.050
0.018
0.014
0.059
0.057
RF2127
http://www.rfmd.com
Fax (336) 664 0454
Tel (336) 664 1233
-A-
0.010
0.004
2-79
2

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rf2127 Summary of contents

Page 1

... Typical Applicat ions • DECT Cordless Applications • PCS Communication Systems Product Description The RF2127 is a medium-power, high-efficiency, linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 1800MHz digital PCS phone transmitters ...

Page 2

... RF2127 Absolute Maximum Ratings Parameter Supply Voltage ( Power Down Voltage ( Supply Current Input RF Power 2 Output Load VSWR Operating Ambient Temperature Storage Temperature Parameter Overall Frequency Range Maximum Output Power Maximum Output Power Total CW Efficiency Small-signal Gain Second Harmonic Third Harmonic ...

Page 3

... Power supply for the bias circuits. An external RF bypass capacitor required. Keep the traces to the capacitor as short as possible, and connect the capacitor immediately to the ground plane. Rev A3 010720 that is RF grounded at the input, but the actual impedance depends on RF2127 Interface Schematic 2 2-81 ...

Page 4

... RF2127 VPD POWER DOWN 6.2 pF 0.010" x 0.170" P1 330 pF P1 330 0.010" x 0.170" 6.2 pF 2-82 Applicat ion Schemat ic 1850MHz 330 pF 0.010" x 0.170" BIAS 1 CIRCUITS PACKAGE BASE Evaluat ion Board Schemat ic (Download Bill of Materials from www.rfmd.com.) W=0.010" ...

Page 5

... Evaluat ion Board Layout Board Size 1.55” x 1.07” Rev A3 010720 RF2127 2 2-83 ...

Page 6

... RF2127 2 2-84 Rev A3 010720 ...

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