SI2318DS-T1 VISHAY [Vishay Siliconix], SI2318DS-T1 Datasheet
SI2318DS-T1
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SI2318DS-T1 Summary of contents
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... Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature Document Number: 72322 S-31731—Rev. A, 18-Aug-03 New Product I (A) D 3.9 3.5 TO-236 (SOT-23 Ordering Information: Si2318DS-T1 (with Tape and Reel Top View Si2318DS( C8)* *Marking Code = 25_C UNLESS OTHERWISE NOTED) A Symbol 25_C A ...
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... Si2318DS Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) A Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain Source On Resistance Drain-Source On-Resistance a Forward Transconductance Diode Forward Voltage ...
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... 0.1 0.0 0.2 0.4 0.6 0 Source-to-Drain Voltage (V) SD Document Number: 72322 S-31731—Rev. A, 18-Aug-03 New Product 25_C J 1.0 1.2 1.4 Si2318DS Vishay Siliconix Capacitance 800 C 600 iss 400 200 C oss C rss Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 2 ...
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... Si2318DS Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 0 250 0.0 - 0.2 - 0.4 - 0 Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 New Product 75 100 125 150 Safe Operating Area, Junction-to-Case 100 ...