2SK1061_07 TOSHIBA [Toshiba Semiconductor], 2SK1061_07 Datasheet
2SK1061_07
Manufacturer Part Number
2SK1061_07
Description
Silicon N Channel MOS Type High Speed Switching Applications
Manufacturer
TOSHIBA [Toshiba Semiconductor]
Datasheet
1.2SK1061_07.pdf
(5 pages)
High Speed Switching Applications
Analog Switch Applications
Interface Applications
•
•
•
•
•
Absolute Maximum Ratings
Excellent switching times: t
High forward transfer admittance: |Y
Low on resistance: R
Enhancement-mode
Complementary to 2SJ167
Drain-source voltage
Gate-source voltage
Drain current
Drain power dissipation (Ta = 25°C)
Channel temperature
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Characteristics
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
DS (ON)
DC
Pulse
on
= 0.6 Ω (typ.)
= 14 ns (typ.)
(Ta = 25°C)
Symbol
V
fs
V
T
I
T
P
GSS
I
DP
| = 100 mS (min)
DS
stg
D
ch
D
2SK1061
−55~150
Rating
±20
200
800
300
150
60
1
Unit
mW
mA
°C
°C
V
V
Weight: 0.13 g (typ.)
JEDEC
JEITA
TOSHIBA
2-4E1E
2007-11-01
―
―
2SK1061
Unit: mm
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2SK1061_07 Summary of contents
Page 1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications Interface Applications • Excellent switching times • High forward transfer admittance: |Y • Low on resistance 0.6 Ω (typ.) DS ...
Page 2
Electrical Characteristics Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Forward transfer admittance Drain-source ON resistance Drain-source ON voltage Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off ...
Page 3
3 2SK1061 2007-11-01 ...
Page 4
4 2SK1061 2007-11-01 ...
Page 5
RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to ...