2SJ681_09 TOSHIBA [Toshiba Semiconductor], 2SJ681_09 Datasheet

2SJ681_09

Manufacturer Part Number

2SJ681_09

Description

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U−MOSIII)

Manufacturer

TOSHIBA [Toshiba Semiconductor]

Datasheet

1.2SJ681_09.pdf (6 pages)

Current page: 1 of 6
Download datasheet (161Kb)

Relay Drive, DC−DC Converter and Motor Drive

Applications

Absolute Maximum Ratings

Thermal Characteristics

4-V gate drive

Low drain-source ON-resistance: R

High forward transfer admittance: |Y

Low leakage current: I

Enhancement mode: V

Drain−source voltage

Drain−gate voltage (R

Gate−source voltage

Drain current

Drain power dissipation

Single pulse avalanche energy

Avalanche current

Repetitive avalenche energy (Note 3)

Channel temperature

Storage temperature range

Note:

Thermal resistance, channel to case

Thermal resistance, channel to ambient

Note 1: Ensure that the channel temperature does not exceed 150℃.

Note 2: V

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device. Handle with care.

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and

Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Characteristics

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U−MOSIII)

= −25 V, T

Pulse (Note 1)

DSS

= 20 kΩ)

= −0.8 to −2.0 V (V

(Note 1)

(Note 2)

= −100 μA (max) (V

= 25°C (initial), L = 2.2 mH, R

DS (ON)

(Ta = 25°C)

| = 5.0 S (typ.)

Symbol

DGR

GSS

DSS

stg

Symbol

th (ch−c)

th (ch−a)

= 0.12 Ω (typ.)

2SJ681

= −10 V, I

= −60 V)

−55 to 150

Rating

40.5

−60

±20

−20

150

−5

Max

6.25

125

= 25 Ω, I

= −1 mA)

°C / W

Unit

°C

= −5 A

Weight: 0.36 g (typ.)

JEDEC

JEITA

TOSHIBA

0.8 MAX.

0.9

1.1 MAX.

1. GATE

2. DRAIN

3. SOURSE

（HEAT SINK）

6.5 ± 0.2

5.2 ± 0.2

2.3

0.6 ± 0.15

2-7J2B

2009-09-29

―

2SJ681

Unit: mm

0.6 MAX.

1.1 ± 0.2

Related parts for 2SJ681_09

2SJ681_09 Summary of contents

Page 1

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U−MOSIII) Relay Drive, DC−DC Converter and Motor Drive Applications 4-V gate drive Low drain-source ON-resistance: R High forward transfer admittance −100 μA (max) (V Low leakage current: I DSS ...

Page 2

Electrical Characteristics Characteristics Gate leakage current Drain cut−off current Drain−source breakdown voltage Gate threshold voltage Drain−source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn−on time Switching time Fall time Turn−off time Total gate ...

Page 3

I – −5 −6 −10 −4. −3.5 Common source Tc = 25°C −8 Pulse test −4 −3 − −2.5V −1 0 −0.4 −0.8 −1.2 −1.6 0 Drain−source voltage V ( – V ...

Page 4

(ON) −0.4 Common source Pulse test −0 −5 A −2.5 −0 −4 V −2.5 −1.2 −0 − −80 − Case temperature Tc ...

Page 5

Duty = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 10 μ 100 μ Safe operating area −100 I D max (pulsed) * − max (continuous) DC operation Tc = 25°C −1 *: ...

Page 6

RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and ...

Related keywords

2SJ681_09 datasheet
2SJ681_09 data sheet
2SJ681_09 pdf datasheet
2SJ681_09 component
2SJ681_09 part
2SJ681_09 distributor
2SJ681_09 RoHS
2SJ681_09 datasheet download