2SJ681_09 TOSHIBA [Toshiba Semiconductor], 2SJ681_09 Datasheet - Page 4

• Manufacturer Part Number: 2SJ681_09
• Description: TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U−MOSIII)
• Manufacturer: TOSHIBA [Toshiba Semiconductor]

10000
−0.2
−0.1
−0.4
−0.3
1000
100
30
20
10
−80
40
0
10
0
−0.1
0
Common source
Pulse test
Common source
V GS = 0 V
f = 1 MHz
Tc = 25°C
V GS = −4 V
−40
Drain−source voltage V
40
V GS = −10 V
Case temperature Tc (°C)
Case temperature Tc (°C)
Capacitance – V
0
−1
R
DS (ON)
80
P
D
40
− Tc
− Tc
120
−1.2
−2.5
80
−10
DS
−2.5
DS
I D = −5 A
160
−5
120
C iss
(V)
C oss
C rss
−1.2
−100
160
200
4
−2.0
−1.6
−1.2
−0.8
−0.4
−50
−40
−30
−20
−10
0.1
10
0
−80
0
1
0
0
Common source
Tc = 25°C
Pulse test
V DS
−40
0.2
Drain−source voltage V
5
Total gate charge Q
Case temperature Tc (°C)
−12V
Dynamic input/output
V GS
10
0.4
0
characteristics
V DD = −48 V
I
−5
V
DR
th
40
15
0.6
− Tc
− V
−1
−3
DS
−10
−24V
20
80
0.8
g
Common source
I D = −5 A
Ta = 25°C
Pulse test
Common source
V DS = −10 V
I D = 1 mA
Pulse test
DS
V GS = 0 V
(nC)
120
25
1.0
(V)
2009-09-29
2SJ681
160
30
1.2
−25
−20
−15
−10
−5
0