SI4420BDY_06 VISHAY [Vishay Siliconix], SI4420BDY_06 Datasheet - Page 3

• Manufacturer Part Number: SI4420BDY_06
• Description: N-Channel 30-V (D-S) MOSFET
• Manufacturer: VISHAY [Vishay Siliconix]

TYPICAL CHARACTERISTICS 25 °C unless noted
Document Number: 73067
S-61013-Rev. B, 12-Jun-06
0.020
0.016
0.012
0.008
0.004
0.000
50
10
10
1
8
6
4
2
0
0.00
0
0
Source-Drain Diode Forward Voltage
V
I
D
DS
On-Resistance vs. Drain Current
0.2
= 13.5 A
5
V
10
= 15 V
SD
V
Q
GS
g
- Source-to-Drain Voltage (V)
-
= 4.5 V
I
T
D
0.4
10
Total Gate Charge (nC)
J
-
Gate Charge
= 150 °C
20
Drain Current (A)
0.6
15
30
0.8
20
V
T
GS
J
40
= 25 °C
= 10 V
1.0
25
1.2
50
30
3000
2500
2000
1500
1000
0.05
0.04
0.03
0.02
0.01
0.00
500
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
- 25
V
I
D
GS
5
= 13.5 A
V
V
2
= 10 V
DS
GS
C
T
J
rss
0
-
- Junction Temperature (°C)
-
Gate-to-Source Voltage (V)
10
Drain-to-Source Voltage (V)
Capacitance
25
4
C
oss
I
D
C
15
50
Vishay Siliconix
= 13.5 A
iss
Si4420BDY
6
75
20
www.vishay.com
100
8
25
125
150
30
10
3