SI4559ADY_09 VISHAY [Vishay Siliconix], SI4559ADY_09 Datasheet

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SI4559ADY_09

Manufacturer Part Number
SI4559ADY_09
Description
N- and P-Channel 60-V (D-S) MOSFET
Manufacturer
VISHAY [Vishay Siliconix]
Datasheet
Notes:
a. Based on T
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 110 °C/W for N-Channel and P-Channel.
Document Number: 73624
S09-0393-Rev. B, 09-Mar-09
Ordering Information: Si4559ADY-T1-E3 (Lead (Pb)-free)
PRODUCT SUMMARY
N-Channel
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current (10 µs Pulse Width)
Source Drain Current Diode Current
Pulsed Source-Drain Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
P-Channel
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
G
G
S
S
C
V
1
1
2
2
= 25 °C.
DS
- 60
60
(V)
1
2
3
4
Si4559ADY-T1-GE3 (Lead (Pb)-free and Halogen-free)
0.150 at V
0.120 at V
0.072 at V
0.058 at V
Top View
SO-8
R
J
N- and P-Channel 60-V (D-S) MOSFET
DS(on)
= 150 °C)
b, d
GS
GS
GS
GS
= - 4.5 V
(Ω)
= - 10 V
= 4.5 V
= 10 V
8
7
6
5
D
D
D
D
1
1
2
2
I
D
- 3.9
- 3.5
5.3
4.7
(A)
A
a
= 25 °C, unless otherwise noted
Q
Steady State
T
T
T
L = 0.1 mH
T
T
T
T
T
T
T
g
6 nC
8 nC
C
C
C
C
C
A
A
A
A
A
t ≤ 10 s
(Typ.)
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• 100 % R
• CCFL Inverter
Symbol
Symbol
T
R
R
J
V
V
E
I
I
Available
I
P
, T
I
DM
SM
thJA
thJF
I
AS
DS
GS
AS
D
S
D
stg
g
G
and UIS Tested
Typ.
®
1
55
33
N-Channel
N-Channel
Power MOSFET
N-Channel MOSFET
4.3
3.4
1.7
1.3
2
5.3
4.3
2.6
6.1
3.1
60
20
20
11
b, c
2
b, c
b, c
b, c
b, c
Max.
62.5
40
- 55 to 150
D
S
1
1
± 20
Typ.
53
30
P-Channel
P-Channel
- 3.0
- 2.4
- 1.7
1.3
- 3.9
- 3.2
- 2.8
2
- 60
- 25
- 25
Vishay Siliconix
3.4
2.2
15
11
b, c
b, c
b, c
b, c
b, c
Si4559ADY
Max.
G
62.5
37
2
P-Channel MOSFET
www.vishay.com
°C/W
S
D
Unit
Unit
mJ
2
°C
2
W
V
A
1

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SI4559ADY_09 Summary of contents

Page 1

N- and P-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY V (V) R (Ω) DS DS(on) 0.058 N-Channel 60 0.072 4 0.120 P-Channel - ...

Page 2

Si4559ADY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current b On-State Drain Current b ...

Page 3

SPECIFICATIONS °C, unless otherwise noted J Parameter a Dynamic Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current ...

Page 4

Si4559ADY Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted thru 0.0 0.2 0.4 0.6 0.8 1 Drain-to-Source ...

Page 5

N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 ° 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 3.0 2.8 2.6 2.4 2.2 2.0 1.8 1.6 1.4 - ...

Page 6

Si4559ADY Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 T - Case Temperature (°C) C Current Derating* * The power dissipation P is based ...

Page 7

N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 ...

Page 8

Si4559ADY Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted thru Drain-to-Source Voltage (V) DS Output Characteristics 0.40 0.35 0.30 ...

Page 9

P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 ° 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.6 0 250 µA D 0.2 0.0 - ...

Page 10

Si4559ADY Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 Case Temperature (°C) C Power Derating, Junction-to-Foot * The power dissipation P is ...

Page 11

P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 ...

Page 12

SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 DIM ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 11-Sep- ...

Page 13

® TrenchFET Power MOSFETs Mounting LITTLE FOOT Wharton McDaniel Surface-mounted LITTLE FOOT power MOSFETs use integrated circuit and small-signal packages which have been been modified ...

Page 14

Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.022 (0.559) Return to Index Return to Index www.vishay.com 22 0.172 (4.369) 0.028 (0.711) 0.050 (1.270) Recommended Minimum Pads Dimensions in Inches/(mm) Document Number: 72606 Revision: 21-Jan-08 ...

Page 15

... Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’ ...

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