SI4816DY-E3 VISHAY [Vishay Siliconix], SI4816DY-E3 Datasheet - Page 4

• Manufacturer Part Number: SI4816DY-E3
• Description: Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
• Manufacturer: VISHAY [Vishay Siliconix]

Si4816DY
Vishay Siliconix
www.vishay.com
4
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
--0.0
--0.2
--0.4
--0.6
--0.8
--1.0
40
10
0.6
0.4
0.2
1
0.01
0.0
0.1
--50
2
1
10
- -4
0.2
--25
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
Source-Drain Diode Forward Voltage
V
SD
0.4
T
0
J
-- Source-to-Drain Voltage (V)
= 150_C
T
Threshold Voltage
J
-- Temperature (_C)
10
25
0.6
- -3
50
0.8
I
D
Normalized Thermal Transient Impedance, Junction-to-Ambient
= 250 mA
75
T
1.0
J
10
= 25_C
100
- -2
1.2
125
Square Wave Pulse Duration (sec)
1.4
150
10
- -1
1
0.05
0.04
0.03
0.02
0.01
0.00
100
80
60
40
20
0
0.001
0
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
10
2
V
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
GS
P
0.01
DM
JM
-- Gate-to-Source Voltage (V)
- - T
t
A
1
= P
4
Time (sec)
t
2
DM
Z
0.1
thJA
100
thJA
S-41697—Rev. E, 20-Sep-04
t
t
1
2
(t)
Document Number: 71121
I
D
= 100_C/W
6
= 10 A
CHANNEL-1
1
600
8
10
10