SI4840BDY VISHAY [Vishay Siliconix], SI4840BDY Datasheet

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SI4840BDY

Manufacturer Part Number
SI4840BDY
Description
N-Channel 40-V (D-S) MOSFET
Manufacturer
VISHAY [Vishay Siliconix]
Datasheet

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Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Maximum under Steady State conditions is 85 °C/W.
d. Based on T
Document Number: 69795
S09-0532-Rev. C, 06-Apr-09
Ordering Information: Si4840BDY-T1-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Avalanche Current
Avalanche Energy
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
PRODUCT SUMMARY
V
DS
40
(V)
S
S
S
G
C
= 25 °C.
1
2
3
4
0.012 at V
0.009 at V
Si4840BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
R
Top View
DS(on)
SO-8
GS
GS
J
(Ω)
= 4.5 V
= 10 V
= 150 °C)
a, c
8
7
6
5
N-Channel 40-V (D-S) MOSFET
D
D
D
D
I
D
19
16
(A)
Steady State
d
t ≤ 10 s
T
T
T
T
L = 0.1 mH
T
T
T
T
T
T
C
C
A
A
C
A
C
C
A
A
A
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C, unless otherwise noted
Q
g
15 nC
(Typ.)
Symbol
R
R
thJA
thJF
Symbol
T
J
V
V
E
I
I
P
, T
DM
I
I
AS
DS
GS
AS
D
S
D
FEATURES
APPLICATIONS
stg
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• 100 % R
• 100 % UIS Tested
• Compliant to RoHS directive 2002/95/EC
• Synchronous Rectification
• POL, IBC
Definition
- Secondary Side
Typical
37
17
g
Tested
®
Power MOSFET
- 55 to 150
12.4
9.9
2.1
2.5
1.6
Limit
± 20
3.8
40
19
15
50
15
11
5
6
G
a, b
a, b
a, b
a, b
a, b
N-Channel MOSFET
Maximum
50
21
Vishay Siliconix
D
S
Si4840BDY
www.vishay.com
°C/W
Unit
Unit
mJ
°C
W
V
A
A
1

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SI4840BDY Summary of contents

Page 1

... Top View Ordering Information: Si4840BDY-T1-E3 (Lead (Pb)-free) Si4840BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Avalanche Current Avalanche Energy Continuous Source-Drain Diode Current ...

Page 2

... Si4840BDY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... Q - Total Gate Charge (nC) g Gate Charge Document Number: 69795 S09-0532-Rev. C, 06-Apr- 1.2 1.6 2 Si4840BDY Vishay Siliconix ° 125 ° 0.0 0.5 1.0 1.5 2.0 2 Gate-to-Source Voltage (V) GS Transfer Characteristics 2400 C iss 2000 ...

Page 4

... Si4840BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 ° 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 2 250 µA D 2.2 2.0 1.8 1.6 1.4 1.2 1 Temperature (°C) J Threshold Voltage www.vishay.com 4 0.030 0.025 0.020 0.015 0.010 °C J 0.005 0.000 ...

Page 5

... It is used to determine the current rating, when this rating falls below the package limit. Document Number: 69795 S09-0532-Rev. C, 06-Apr-09 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper J(max) Si4840BDY Vishay Siliconix ...

Page 6

... Si4840BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www ...

Page 7

SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 DIM ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 11-Sep- ...

Page 8

® TrenchFET Power MOSFETs Mounting LITTLE FOOT Wharton McDaniel Surface-mounted LITTLE FOOT power MOSFETs use integrated circuit and small-signal packages which have been been modified ...

Page 9

Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.022 (0.559) Return to Index Return to Index www.vishay.com 22 0.172 (4.369) 0.028 (0.711) 0.050 (1.270) Recommended Minimum Pads Dimensions in Inches/(mm) Document Number: 72606 Revision: 21-Jan-08 ...

Page 10

... Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’ ...

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