SI1304DL-T1 VISHAY [Vishay Siliconix], SI1304DL-T1 Datasheet

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SI1304DL-T1

Manufacturer Part Number
SI1304DL-T1
Description
N-Channel 25-V (D-S) MOSFET
Manufacturer
VISHAY [Vishay Siliconix]
Datasheet

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Notes
a.
Document Number: 71315
S-41774—Rev. C, 04-Oct-04
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Continuous Diode Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
M
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
Surface Mounted on 1” x 1” FR4 Board.
i
DS
25
25
(V)
J
ti
0.450 @ V
0.350 @ V
t A bi
r
DS(on)
J
J
a
a
GS
GS
= 150_C)
= 150_C)
t
a
a
= 2.5 V
(W)
= 4.5 V
Parameter
Parameter
a
a
N-Channel 25-V (D-S) MOSFET
a
G
S
Ordering Information: Si1304DL-T1
I
D
0.75
0.66
1
2
(A)
SC-70 (3-LEADS)
SOT-323
Top View
A
= 25_C UNLESS OTHERWISE NOTED)
Q
Steady State
Steady State
g
T
T
T
T
t v 5 sec
A
A
A
A
1 3
1.3
(Typ)
= 25_C
= 70_C
= 25_C
= 70_C
3
D
Symbol
Symbol
T
R
R
R
J
V
V
I
P
P
, T
DM
thJA
thJF
I
I
I
GS
DS
D
D
S
D
D
stg
Marking Code
KB
XX
Part # Code
Typical
5 secs
0.75
0.60
0.28
0.33
0.21
315
380
285
Lot Traceability
and Date Code
−55 to 150
"8
3.0
25
Steady State
Maximum
Vishay Siliconix
0.70
0.56
0.24
0.29
0.19
375
450
340
Si1304DL
www.vishay.com
Unit
Unit
_C/W
_C
C/W
W
W
V
V
A
A
1

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SI1304DL-T1 Summary of contents

Page 1

... Surface Mounted on 1” x 1” FR4 Board. Document Number: 71315 S-41774—Rev. C, 04-Oct-04 I (A) Q (Typ 0. 1.3 0.66 SOT-323 SC-70 (3-LEADS Top View Ordering Information: Si1304DL-T1 = 25_C UNLESS OTHERWISE NOTED) A Symbol 25_C 70_C ...

Page 2

... Si1304DL Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain-Source On-State Resistance Drain Source On State Resistance a Forward Transconductance a Diode Forward Voltage ...

Page 3

... T = 150_C J 0 0.01 0.001 0.0 0.2 0.4 0.6 0.8 V − Source-to-Drain Voltage (V) SD Document Number: 71315 S-41774—Rev. C, 04-Oct- 4 2.5 3.0 2.0 2.5 = 25_C 1.0 1.2 Si1304DL Vishay Siliconix Capacitance 200 150 100 C iss C oss 50 C rss − Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature ...

Page 4

... Si1304DL Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.2 0 250 mA D −0.0 −0.1 −0.2 −0.3 −0.4 −50 − − Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 −4 − Normalized Thermal Transient Impedance, Junction-to-Foot ...

Page 5

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description ...

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