SUM40N10-30_08 VISHAY [Vishay Siliconix], SUM40N10-30_08 Datasheet

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SUM40N10-30_08

Manufacturer Part Number
SUM40N10-30_08
Description
Manufacturer
VISHAY [Vishay Siliconix]
Datasheet
Notes:
a. Duty cycle ≤ 1 %.
b. See SOA curve for voltage derating.
c. When Mounted on 1" square PCB (FR-4 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 72134
S-80272-Rev. B, 11-Feb-08
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
Junction-to-Case (Drain)
V
(BR)DSS
Ordering Information: SUM40N10-30
100
(V)
G
Top View
TO-263
D
0.030 at V
0.034 at V
S
SUM40N10-30-E3 (Lead (Pb)-free)
r
N-Channel 100-V (D-S) 175 °C MOSFET
DS(on)
J
a
a
= 175 °C)
GS
GS
(Ω)
= 10 V
= 6 V
C
I
= 25 °C, unless otherwise noted
D
37.5
40
(A)
(PCB Mount)
T
T
T
L = 0.1 mH
T
C
A
C
C
= 125 °C
= 25 °C
= 25 °C
= 25 °C
c
c
FEATURES
• TrenchFET
• 175 °C Junction Temperature
• Low Thermal Resistance Package
Symbol
Symbol
T
R
J
R
V
V
E
I
I
P
, T
DM
I
AR
thJC
GS
thJA
DS
AR
D
D
®
stg
Power MOSFETS
G
N-Channel MOSFET
- 55 to 175
Limit
Limit
± 20
107
3.75
100
1.4
40
23
75
35
61
40
SUM40N10-30
D
S
b
Vishay Siliconix
www.vishay.com
°C/W
Unit
Unit
RoHS*
mJ
COMPLIANT
°C
W
V
A
Available
1

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SUM40N10-30_08 Summary of contents

Page 1

... DS(on) 0.030 100 0.034 TO-263 Top View Ordering Information: SUM40N10-30 SUM40N10-30-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 175 °C) J Pulsed Drain Current Avalanche Current a Repetitive Avalanche Energy a Maximum Power Dissipation ...

Page 2

... SUM40N10-30 Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge ...

Page 3

... V - Drain-to-Source Voltage (V) DS Capacitance Document Number: 72134 S-80272-Rev. B, 11-Feb- °C 125 ° 100 SUM40N10-30 Vishay Siliconix 125 ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics 0.08 0.06 0.04 ...

Page 4

... SUM40N10-30 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 2.0 1.5 1.0 0.5 0 Junction Temperature (°C) J On-Resistance vs. Junction Temperature 1000 100 150 ° 0.1 0.00001 0.0001 0.001 t (s) in Avalanche Current vs. Time www.vishay.com 4 100 ...

Page 5

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72134. Document Number: 72134 S-80272-Rev. B, 11-Feb-08 100 125 150 175 - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case SUM40N10-30 Vishay Siliconix 1000 Limited by r DS(on) * 100 °C C Single Pulse 0.1 0.1 ...

Page 6

All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or ...

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