k4j55323qi Samsung Semiconductor, Inc., k4j55323qi Datasheet - Page 50

• Manufacturer Part Number: k4j55323qi
• Description: 256mbit Gddr3 Sdram
• Manufacturer: Samsung Semiconductor, Inc.

Note :
1. Measured with outputs open and ODT off
2. Refresh period is 32ms
3. VIH(AC) and VIL(AC)
Operating Current
(One Bank Active)
Precharge Standby Current
in Power-down mode
Precharge Standby Current
in Non Power-down mode
Active Standby Current
power-down mode
Active Standby Current in
in Non Power-down mode
Operating Current
Refresh Current
Self Refresh Current
Operating Current
(4Bank interleaving)
K4J55323QI
11.5 CAPACITANCE
11.4 DC CHARACTERISTICS
( Burst Mode)
Input capacitance ( CK, CK )
Input capacitance (A
Input capacitance
( CKE, CS, RAS,CAS, WE )
Data & DQS input/output capacitance(DQ
Input capacitance(DM0 ~ DM3)
Parameter
0
Parameter
~A
11
, BA
Symbol
0
I
I
I
I
CC2
CC3
CC2
CC3
~BA
I
I
I
I
I
CC1
CC4
CC5
CC6
CC7
N
N
P
P
1
)
(
Burst Length=4 t
I
CKE ≤ V
CKE ≥ V
V
CKE ≤ V
CKE ≥ VIH(min), CS ≥
VIH(min),
t
I
Page Burst, All Banks acti-
vated.
t
CKE ≤ 0.2V
Burst Length=4 t
I
OL
CC
OL
RC
OL
0°C ≤ Tc ≤85°C ; VDD/VDDQ=1.8V + 0.1V
IH
0
=0mA, t
=0mA ,t
=0mA,
= t
≥ t
(min), t
~DQ
RFC
CC
Test Condition
(min)
31
IL
IH
IL
(max), t
(max), t
t
)
(min), CS ≥
CC
CC
CC
CC
= t
= t
= t
=
t
CC
CC
CC
CC
RC
RC
CC
CC
(min)
(min),
(min)
(min)
= t
= t
≥ t
≥ t
50 / 54
CC
CC
RC
RC
Symbol
(min)
(min)
(min)
(min)
C
C
C
C
C
OUT
IN1
IN2
IN3
IN4
-BJ1A
1145
475
165
120
340
735
465
95
20
for -BC**, VDD/VDDQ=1.9
Min
1.5
1.5
1.5
1.5
1.5
-BJ11
1065
440
155
320
680
430
115
90
20
256M GDDR3 SDRAM
Version
-BC12
400
145
105
295
620
385
970
85
20
(VDD=1.8V, TA= 25°C, f=1MHz)
Rev. 1.3 May 2007
Max
3.0
3.0
3.0
2.0
2.0
-BC14
380
145
100
290
590
365
925
85
20
V + 0.1V
Unit Note
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
for -BJ**
pF
pF
pF
pF
pF
1,3
1,3
1,3
1,3
1,2
1
1
1
1
)