MRF372D MOTOROLA [Motorola, Inc], MRF372D Datasheet

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MRF372D

Manufacturer Part Number
MRF372D
Description
THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTOR
Manufacturer
MOTOROLA [Motorola, Inc]
Datasheet
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
RF Power Field-Effect Transistor
N–Channel Enhancement–Mode Lateral MOSFET
cies from 470 to 860 MHz. The high gain and broadband performance of this
device make it ideal for large–signal, common source amplifier applications in
32 volt transmitter equipment.
• Typical Narrowband Two–Tone Performance @ f1 = 857 MHz,
• Typical Broadband Two–Tone Performance @ f1 = 857 MHz,
• Internally Matched, Controlled Q, for Ease of Use
• Integrated ESD Protection
• 100% Tested for Load Mismatch Stress at All Phase Angles
• Excellent Thermal Stability
• Characterized with Series Equivalent Large–Signal Impedance Parameters
(1) Each side of device measured separately.
MAXIMUM RATINGS
ESD PROTECTION CHARACTERISTICS
THERMAL CHARACTERISTICS
REV 5
Motorola, Inc. 2002
MOTOROLA RF DEVICE DATA
Drain–Source Voltage
Gate–Source Voltage
Drain Current – Continuous
Total Device Dissipation @ T
Storage Temperature Range
Operating Junction Temperature
Human Body Model
Machine Model
Thermal Resistance, Junction to Case
Designed for broadband commercial and industrial applications with frequen-
f2 = 863 MHz, 32 Volts
f2 = 863 MHz, 32 Volts
with 3:1 VSWR @ 32 Vdc, f1 = 857 MHz, f2 = 863 MHz, 180 Watts PEP
Derate above 25°C
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Output Power — 180 Watts PEP
Power Gain — 17 dB
Efficiency — 36%
IMD — –35 dBc
Output Power — 180 Watts PEP
Power Gain — 14.5 dB
Efficiency — 37%
IMD — –31 dBc
(1)
C
= 25°C
Test Conditions
Characteristic
Rating
Symbol
Symbol
V
R
V
T
P
DSS
T
I
θJC
GS
stg
D
D
J
470 – 860 MHz, 180 W, 32 V
LATERAL N–CHANNEL
CASE 375G–04, STYLE 1
RF POWER MOSFET
M3 (Minimum)
MRF372
– 65 to +150
1 (Minimum)
– 0.5, +15
Class
Value
Max
350
200
2.0
0.5
NI–860C3
68
17
Order this document
by MRF372/D
MRF372
W/°C
°C/W
Unit
Unit
Vdc
Vdc
Adc
°C
°C
W
1

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MRF372D Summary of contents

Page 1

MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequen- cies from 470 to 860 MHz. The high gain and broadband performance of this device ...

Page 2

ELECTRICAL CHARACTERISTICS (T C Characteristic (1) OFF CHARACTERISTICS Drain–Source Breakdown Voltage =10 µ Vdc Zero Gate Voltage Drain Current ( Vdc Vdc Gate–Source Leakage Current (V = ...

Page 3

Note: C MOTOROLA RF DEVICE DATA TYPICAL CHARACTERISTICS does not include input matching capacitance. iss Figure 1. Capacitance versus Voltage MRF372 3 ...

Page 4

Figure 2. 860 MHz Narrowband DC Bias Networks Table 1. 860 MHz Narrowband DC Bias Networks Component Designations and Values Designation Á Á Á Á Á Á Á Á Á Á C1 Á Á Á Á Á Á Á Á ...

Page 5

Figure 3. 860 MHz Narrowband Component Layout MOTOROLA RF DEVICE DATA Vertical Balun Mounting Detail MRF372 5 ...

Page 6

TYPICAL TWO–TONE NARROWBAND CHARACTERISTICS Figure 4. COFDM Performance (860 MHz) h Figure 5. 8–VSB Performance (860 MHz) Figure 7. Intermodulation Distortion versus Output Power MRF372 6 h Figure 6. Power Gain versus Output Power Figure 8. Drain Efficiency versus Output ...

Page 7

Harmonics Z source Z load Figure 9. Narrowband Series Equivalent Input and Output Impedance MOTOROLA RF DEVICE DATA Ω source load Ω Ω MHz 845 3.99 + j2.50 5.63 – j0.38 860 3.56 + j1.98 5.28 – ...

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Figure 10. 470–860 MHz Broadband DC Bias Networks Table 2. 470–860 MHz Broadband DC Bias Networks Component Designations and Values Designation Á Á Á Á Á Á Á Á Á Á C1 Á Á Á Á Á Á Á Á ...

Page 9

Figure 11. 470–860 MHz Broadband Component Layout MOTOROLA RF DEVICE DATA Vertical Balun Mounting Detail MRF372 9 ...

Page 10

TYPICAL TWO–TONE BROADBAND CHARACTERISTICS Figure 12. Power Gain versus Output Power Figure 14. Drain Efficiency versus Output Power MRF372 10 Figure 13. Intermodulation Distortion versus Output Power h MOTOROLA RF DEVICE DATA ...

Page 11

Z source Z load Figure 15. Broadband Series Equivalent Input and Output Impedance MOTOROLA RF DEVICE DATA Ω source load Ω Ω MHz 470 4.46 + j2.57 4.88 + j3.50 560 6.40 – j1.06 5.45 + j0.07 ...

Page 12

J R (LID (INSULATOR Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its ...

Page 13

... This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components. ...

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