MRF377R5 MOTOROLA [Motorola, Inc], MRF377R5 Datasheet

MRF377R5

Manufacturer Part Number

MRF377R5

Description

RF POWER FIELD EFFECT TRANSISTOR

Manufacturer

MOTOROLA [Motorola, Inc]

Datasheet

1.MRF377R5.pdf (12 pages)

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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

The RF MOSFET Line

RF Power Field-Effect Transistor

N–Channel Enhancement–Mode Lateral MOSFET

cies from 470 to 860 MHz. The high gain and broadband performance of this

device make it ideal for large–signal, common source amplifier applications in 32

volt digital television transmitter equipment.

• Typical Broadband DVBT OFDM Performance @ 470–860 MHz, 32 Volts,

• Typical Broadband ATSC 8VSB Performance @ 470–860 MHz, 32 Volts,

• Internally Input and Output Matched for Ease of Use

• Integrated ESD Protection

• Capable of Handling 10:1 VSWR, @ 32 Vdc, 860 MHz, 45 Watts DVBT

• Excellent Thermal Stability

• Characterized with Series Equivalent Large–Signal Impedance Parameters

• Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

(1) Each side of device measured separately.

MAXIMUM RATINGS

THERMAL CHARACTERISTICS

ESD PROTECTION CHARACTERISTICS

Motorola, Inc. 2003

MOTOROLA RF DEVICE DATA

Drain–Source Voltage

Gate–Source Voltage

Drain Current – Continuous

Total Device Dissipation @ T

Storage Temperature Range

Operating Junction Temperature

Thermal Resistance, Junction to Case

Human Body Model

Machine Model

Charge Device Model

Designed for broadband commercial and industrial applications with frequen-

REV 0

OFDM Output Power

R5 Suffix = 50 Units per 56 mm, 13 inch Reel.

Derate above 25°C

NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

Output Power — 45 Watts Avg.

Power Gain ≥ 16.7 dB

Efficiency ≥ 21%

ACPR ≤ –58 dBc

Output Power — 80 Watts Avg.

Power Gain ≥ 16.5 dB

Efficiency ≥ 27.5%

IMD ≤ –31.3 dBc

= 2.0 A, 8K Mode, 64 QAM

= 2.0 A

(1)

= 25°C

Test Conditions

Characteristic

Freescale Semiconductor, Inc.

For More Information On This Product,

Rating

Go to: www.freescale.com

Symbol

DSS

θJC

stg

MRF377R3

MRF377R5

470 – 860 MHz, 240 W, 32 V

MRF377 MRF377R3 MRF377R5

CASE 375G–04, STYLE 1

LATERAL N–CHANNEL

MRF377

RF POWER MOSFET

M3 (Minimum)

– 65 to +150

1 (Minimum)

7 (Minimum)

– 0.5, +15

Class

Value

2.78

Max

0.36

486

200

NI–860C3

Order this document

by MRF377/D

W/°C

°C/W

Unit

Vdc

Adc

°C

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