MRF5P21180R6 MOTOROLA [Motorola, Inc], MRF5P21180R6 Datasheet

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MRF5P21180R6

Manufacturer Part Number
MRF5P21180R6
Description
RF Power Field Effect Transistor
Manufacturer
MOTOROLA [Motorola, Inc]
Datasheet
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Sub–Micron MOSFET Line
RF Power Field Effect Transistor
N–Channel Enhancement–Mode Lateral MOSFET
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
To be used in Class AB for PCN–PCS/cellular radio and WLL applications.
• Typical 2–carrier W–CDMA Performance for V
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 180 Watts CW
• Excellent Thermal Stability
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• Qualified Up to a Maximum of 32 V
MAXIMUM RATINGS
REV 0
Motorola, Inc. 2002
MOTOROLA RF DEVICE DATA
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ T
Storage Temperature Range
Operating Junction Temperature
Designed for W–CDMA base station applications with frequencies from 2110
I
Channel Bandwidth = 3.84 MHz, Adjacent Channels Measured over
3.84 MHz BW @ f1 – 5 MHz and f2 + 5 MHz. Distortion Products
Measured over a 3.84 MHz BW @ f1 – 10 MHz and f2 + 10 MHz,
Each Carrier Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF.
Output Power
DQ
Derate above 25°C
IM3 — 37.5 dBc
ACPR — –41 dBc
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Output Power — 38 Watts Avg.
Power Gain — 14 dB
Efficiency — 25.5%
= 2 x 800 mA, f1 = 2135 MHz, f2 = 2145 MHz,
C
= 25°C
Rating
DD
Operation
DD
= 28 Volts,
Symbol
V
V
T
P
DSS
T
stg
GS
D
J
MRF5P21180
2170 MHz, 180 W AVG.,
LATERAL N–CHANNEL
CASE 375D–04, STYLE 1
RF POWER MOSFET
2 x W–CDMA, 28 V
–65 to +150
–0.5, +15
Value
437.5
200
NI–1230
2.5
65
Order this document
by MRF5P21180/D
MRF5P21180
Watts
W/°C
Unit
Vdc
Vdc
°C
°C
1

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MRF5P21180R6 Summary of contents

Page 1

MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To ...

Page 2

THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 180 W CW Case Temperature 80° ELECTRICAL CHARACTERISTICS (T C Characteristic OFF CHARACTERISTICS (1) Zero Gate Voltage Drain Leakage Current ( Vdc ...

Page 3

Z1, Z22 1.000″ x 0.066″ Microstrip Z2, Z21 0.760″ x 0.113″ Microstrip Z3, Z20 0.068″ x 0.066″ Microstrip Z4, Z19 1.672″ x 0.066″ Microstrip Z5, Z6 0.318″ x 0.066″ Microstrip Z7, Z8 0.284″ x 0.180″ Microstrip Figure 1. MRF5P21180 Test ...

Page 4

Figure 2. MRF5P21180 Test Circuit Component Layout MRF5P21180 4 MRF5P21180 Rev 5 MOTOROLA RF DEVICE DATA ...

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Figure 3. 2–Carrier W–CDMA Broadband Performance Figure 4. Two–Tone Power Gain versus Output Power Figure 6. Intermodulation Distortion Products versus Tone Spacing MOTOROLA RF DEVICE DATA TYPICAL CHARACTERISTICS Figure 5. Third Order Intermodulation Distortion versus Output Power Figure 7. ...

Page 6

Figure 8. 2–Carrier W–CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power Figure 10. CCDF W–CDMA 3GPP, Test Model 1, 64 DPCH, 67% Clipping, Single Carrier Test Signal MRF5P21180 6 Figure 9. 2-Carrier W-CDMA Spectrum ° ± ...

Page 7

Z source Z load Figure 12. Series Equivalent Input and Output Impedance MOTOROLA RF DEVICE DATA Ω source load Ω Ω MHz 2110 5.39 – j13.89 3.69 – j10.51 2140 5.66 – j13.99 3.81 – j10.66 2170 ...

Page 8

(LID) E PIN (INSULATOR) Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation, ...

Page 9

... This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components. ...

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