MRF5S21130R3 MOTOROLA [Motorola, Inc], MRF5S21130R3 Datasheet

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MRF5S21130R3

Manufacturer Part Number
MRF5S21130R3
Description
The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs
Manufacturer
MOTOROLA [Motorola, Inc]
Datasheet
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
t i o n s . To b e u s e d i n C l a s s A B f o r P C N – P C S / c e l l u l a r r a d i o a n d W L L
applications.
• Typical 2–carrier W–CDMA Performance for V
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 92 Watts CW
• Excellent Thermal Stability
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• Qualified Up to a Maximum of 32 V
• Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MAXIMUM RATINGS
REV 0
Motorola, Inc. 2002
MOTOROLA RF DEVICE DATA
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ T
Storage Temperature Range
Operating Junction Temperature
CW Operation
Designed for W–CDMA base station applications at frequencies from 2110
I
3.84 MHz, Adjacent Channels Measured over 3.84 MHz BW @ f1
and f2 +5 MHz, Distortion Products Measured over a 3.84 MHz BW
@ f1 –10 MHz and f2 +10 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability
on CCDF.
Output Power
DQ
Derate above 25°C
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Output Power — 28 Watts Avg.
Power Gain — 13.5 dB
Efficiency — 26%
IM3 — –37 dBc
ACPR — –39 dBc
= 1200 mA, f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth =
C
= 25°C
Rating
DD
Operation
DD
= 28 Volts,
MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3
5 MHz
Symbol
V
V
CW
T
P
DSS
T
stg
GS
MRF5S21130SR3
D
J
CASE 465B–03, STYLE 1
MRF5S21130R3
CASE 465C–02, STYLE 1
MRF5S21130S
MRF5S21130
MRF5S21130S
MRF5S21130
LATERAL N–CHANNEL
2170 MHz, 28 W AVG.,
RF POWER MOSFETs
NI–880S
2 x W–CDMA, 28 V
NI–880
–65 to +150
–0.5, +15
Value
315
200
65
92
2
Order this document
by MRF5S21130/D
Watts
Watts
W/°C
Unit
Vdc
Vdc
°C
°C
1

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MRF5S21130R3 Summary of contents

Page 1

... MOS devices should be observed. REV 0 MOTOROLA RF DEVICE DATA  Motorola, Inc. 2002 = 28 Volts MHz – Operation MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3 Order this document by MRF5S21130/D MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3 2170 MHz AVG W–CDMA LATERAL N–CHANNEL RF POWER MOSFETs CASE 465B– ...

Page 2

... MHz at f1 –5 MHz and f2 +5 MHz.) Input Return Loss ( Vdc Avg 1200 mA 2112.5 MHz, DD out 2122.5 MHz and f1 = 2157.5 MHz 2167.5 MHz) (1) Part is internally matched both on input and output. MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3 2 Symbol = 25°C unless otherwise noted) Symbol I DSS I DSS I GSS ...

Page 3

... Microstrip Z14, Z15 0.070″ x 0.220″ Microstrip Z16 0.430″ x 0.083″ Microstrip Taconic TLX8, 0.76 mm, ε PCB Description Value, P/N or DWG 293D1106X9035D 1812Y224KXA 100B6R8CW 100B0R1BW 100B0R5BW 13668221 MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3 = 2.55 r Manufacturer Vishay–Sprague Vishay–Vitramon ATC ATC ATC Philips 3 ...

Page 4

... Figure 2. MRF5S21130 Test Circuit Component Layout MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3 4 MRF5S21130 Rev 0 MOTOROLA RF DEVICE DATA ...

Page 5

... Figure 3. 2–Carrier W–CDMA Broadband Performance Figure 4. Two–Tone Power Gain versus Output Power Figure 6. Intermodulation Distortion Products versus Tone Spacing MOTOROLA RF DEVICE DATA TYPICAL CHARACTERISTICS Figure 5. Third Order Intermodulation Distortion Figure 7. Pulse CW Output Power versus MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3 versus Output Power µ Input Power 5 ...

Page 6

... Figure 8. 2–Carrier W–CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power Figure 10. CCDF W–CDMA 3GPP, Test Model 1, 64 DPCH, 67% Clipping, Single Carrier Test Signal MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3 6 η Figure 9. 2-Carrier W-CDMA Spectrum ± Figure 11. MTBF Factor versus Junction Temperature ° ...

Page 7

... MHz 2080 2.87 – j9.49 1.51 – j2.97 2110 3.13 – j9.86 1.52 – j2.54 2140 4.05 – j10.90 1.59 – j2.68 2170 4.80 – j11.75 1.62 – j2.70 2200 5.55 – j11.87 1.54 – j3.13 = Test circuit impedance as measured from gate to ground. = Test circuit impedance as measured from drain to ground source load MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3 7 ...

Page 8

... MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3 8 NOTES MOTOROLA RF DEVICE DATA ...

Page 9

... MOTOROLA RF DEVICE DATA NOTES MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3 9 ...

Page 10

... MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3 10 NOTES MOTOROLA RF DEVICE DATA ...

Page 11

... (LID) S (INSULATOR) F SEATING T PLANE CASE 465B–03 ISSUE B NI–880 MRF5S21130 R (LID) S (INSULATOR) F CASE 465C–02 ISSUE A NI–880S MRF5S21130S MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3 INCHES MILLIMETERS DIM MIN MAX MIN MAX aaa bbb ...

Page 12

... JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3–20–1, Minami–Azabu. Minato–ku, Tokyo 106–8573 Japan. 81–3–3440–3569 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T. Hong Kong. 852–26668334 Technical Information Center: 1–800–521–6274 HOME PAGE: http://www.motorola.com/semiconductors/ MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3 ◊ 12 MOTOROLA RF DEVICE DATA ...

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