MRF8372R1 MOTOROLA [Motorola, Inc], MRF8372R1 Datasheet - Page 4

• Manufacturer Part Number: MRF8372R1
• Description: RF LOW POWER TRANSISTOR NPN SILICON
• Manufacturer: MOTOROLA [Motorola, Inc]

Z OL * = Conjugate of the optimum load impedance into which the device output operates at a given output power, voltage, and frequency.
MRF8372R1, R2
4
Frequency
1200
1200
900
600
300
900
600
300
MHz
0
0
806
870
960
0
6
Figure 5. Output Power versus Collector Voltage
f
f
f
Figure 3. Output Power versus Input Power
15
30
8
V CC , COLLECTOR VOLTAGE (Vdc)
P in = 150 mW
45
V CC = 7.5 V
8.0 + j1.9
5.2 + j3.5
6.8 + j4.0
P in , INPUT POWER (mW)
P in = 150 mW
f = 870 MHz
60
10
100 mW
50 mW
75
Table 1. Series Equivalent Input/Output Impedance
90
12
Ohms
Z in
V CC = 12.5 Vdc
800/900 MHz BAND DATA (continued)
7.5 Vdc
105
TYPICAL CHARACTERISTICS
f = 870 MHz
120
14
P in = 100 mW
V CC = 12.5 V
4.0 + j1.2
6.0 + j1.9
6.1 + j2.5
135
150
16
1000
1600
1200
500
800
400
0
0
800
800
P out = 806 MHz = 820 mW
P out = 870 MHz = 635 mW
P out = 960 MHz = 530 mW
Figure 6. Output Power versus Frequency
Figure 4. Output Power versus Frequency
820
820
V CC = 7.5 V
24.7 – j19.2
36.9 – j20.5
39.3 – j18.5
840
840
f, FREQUENCY (MHz)
860
f, FREQUENCY (MHz)
860
V CC = 7.5 Vdc
MOTOROLA RF DEVICE DATA
Ohms
Z OL *
880
880
P out = 806 MHz = 1.05 mW
P out = 870 MHz = 855 mW
P out = 960 MHz = 580 mW
900
900
V CC = 12.5 V
20.9 – j31.0
32.1 – j26.6
36.3 – j25.7
V CC = 12.5 Vdc
920
920
P in = 150 mW
P in = 150 mW
940
940
100 mW
100 mW
50 mW
50 mW
960
960