EDF1CM VISHAY [Vishay Siliconix], EDF1CM Datasheet

EDF1CM

Manufacturer Part Number

EDF1CM

Description

Miniature Glass Passivated Ultrafast Bridge Rectifier

Manufacturer

VISHAY [Vishay Siliconix]

Datasheet

1.EDF1CM.pdf (4 pages)

Current page: 1 of 4
Download datasheet (96Kb)

Document Number: 88577

Revision: 14-Jan-08

PRIMARY CHARACTERISTICS

MAXIMUM RATINGS (T

PARAMETER

Maximum repetitive peak reverse voltage

Maximum RMS voltage

Maximum DC blocking voltage

Max. average forward output rectified current at T

Peak forward surge current single sine-wave

superimposed on rated load

Rating for fusing (t < 8.3 ms)

Operating junction and storage temperature range

ELECTRICAL CHARACTERISTICS (T

PARAMETER

Maximum instantaneous

forward voltage drop per diode

Maximum reverse

current at rated DC

blocking voltage per diode

Maximum reverse

recovery time per diode

Miniature Glass Passivated Ultrafast Bridge Rectifier

F(AV)

FSM

RRM

max.

Case Style DFM

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

For technical questions within your region, please contact one of the following:

1.0 A

TEST CONDITIONS

= 0.5 A, I

= 25 °C unless otherwise noted)

= 0.25 A

= 25 °C

= 125 °C

50 V to 200 V

150 °C

1.05 V

50 ns

50 A

5 µA

1 A

= 1.0 A,

= 40 °C

= 25 °C unless otherwise noted)

SYMBOL

, T

F(AV)

FSM

RRM

RMS

STG

FEATURES

TYPICAL APPLICATIONS

General purpose use in ac-to-dc bridge full wave

rectification for SMPS, lighting ballaster, adapter,

battery charger, home appliances, office equipment,

and telecommunication applications.

MECHANICAL DATA

Case: DFM

Epoxy meets UL 94V-0 flammability rating

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD22-B102

E3 suffix for consumer grade, meets JESD 201 class

1A whisker test

Polarity: As marked on body

• UL recognition, file number E54214

• Ideal for printed circuit boards

• Ultrafast reverse recovery time for high

• Applicable for automative insertion

• High surge current capability

• Solder dip 260 °C, 40 s

• Component in accordance to RoHS 2002/95/EC

EDF1AM

frequency

and WEEE 2002/96/EC

Vishay General Semiconductor

EDF1BM

100

EDF1AM thru EDF1DM

- 55 to + 150

1.05

1.0

5.0

1.0

EDF1CM

150

106

150

EDF1DM

200

140

200

www.vishay.com

UNIT

°C

µA

Related parts for EDF1CM

EDF1CM Summary of contents

Page 1

... A SYMBOL EDF1AM 1 EDF1AM thru EDF1DM Vishay General Semiconductor EDF1BM EDF1CM EDF1DM 100 150 200 70 106 140 100 150 200 1 150 EDF1BM EDF1CM EDF1DM 1.05 5.0 1.0 50 www.vishay.com UNIT °C UNIT V µ ...

Page 2

... PREFERRED PACKAGE CODE 45 10 0.1 0.01 120 140 160 Figure 3. Typical Forward Characteristics Per Diode 1000 = 150 °C 100 10 0.1 100 Figure 4. Typical Reverse Leakage Characteristics Per Diode EDF1BM EDF1CM EDF1DM 38 12 BASE QUANTITY DELIVERY MODE 50 Tube °C J Pulse Width = 300 µ Duty Cycle 0.4 0.6 0.8 1 ...

Page 3

1.0 MHz 0 Reverse Voltage (V) Figure 5. Typical Junction Capacitance Per Diode PACKAGE OUTLINE DIMENSIONS in inches (millimeters) 0.130 (3.30) 0.120 (3.05) 0.045 (1.14) 0.035 (0.89) ...

Page 4

All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or ...

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