MRF9030D MOTOROLA [Motorola, Inc], MRF9030D Datasheet - Page 2

• Manufacturer Part Number: MRF9030D
• Description: The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
• Manufacturer: MOTOROLA [Motorola, Inc]

ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
MRF9030LR1 MRF9030LSR1
2
Zero Gate Voltage Drain Leakage Current
Zero Gate Voltage Drain Leakage Current
Gate - Source Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Drain - Source On - Voltage
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
DS
DS
GS
DS
DS
GS
DS
DS
DS
DS
= 68 Vdc, V
= 26 Vdc, V
= 10 Vdc, I
= 26 Vdc, I
= 10 Vdc, I
= 26 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 26 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 26 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 5 Vdc, V
= 10 Vdc, I
DS
D
D
D
D
GS
GS
= 100 µAdc)
= 250 mAdc)
= 2 Adc)
= 0.7 Adc)
= 0 Vdc)
= 0 Vdc)
= 0 Vdc)
Characteristic
Freescale Semiconductor, Inc.
(T
C
For More Information On This Product,
= 25°C unless otherwise noted)
GS
GS
GS
= 0 Vdc)
= 0 Vdc)
= 0 Vdc)
Go to: www.freescale.com
Symbol
V
V
V
I
I
I
C
DS(on)
C
GS(th)
GS(Q)
C
DSS
DSS
GSS
g
oss
iss
rss
fs
Min
—
—
—
—
—
—
—
—
—
2
0.19
49.5
26.5
Typ
2.9
3.8
MOTOROLA RF DEVICE DATA
—
—
—
3
1
Max
0.4
10
—
—
—
—
—
1
1
4
(continued)
µAdc
µAdc
µAdc
Unit
Vdc
Vdc
Vdc
pF
pF
pF
S