sii100n06 Sirectifier Semiconductors, sii100n06 Datasheet - Page 2

• Manufacturer Part Number: sii100n06
• Description: Npt Igbt Modules
• Manufacturer: Sirectifier Semiconductors

IGBT Wechselrichter/ IGBT Inverter
Diode Wechselrichter/ Diode Inverter
Mechanical Data
Characteristics
Symbol
E
R
V
R
V
R
R
T
on
I
I
CE(sat)
C
CC'+EE'
C
L
t
t
E
T
T
M
CES
GES
d(on)
d(off)
I
M
I
V
thCK
GEth
thJC
Q
VJM
thJC
w
t
t
RM
CE
sc
(E
stg
ies
res
rec
VJ
r
f
s
F
t
r
off
)
V
V
V
I
under following conditions
V
under following conditions:
V
R
V
T
under following condition
I
I
-di/dt = 4400A/us
V
to heatsink M6
to terminals M5
C
t
F
F
P
GE
GE
GE
CC
GE
j
GE
CE
Gon
= 100A; V
= 100A; T
=100A; V
= 25(125)
=0; V
= V
= 0; V
= 0, V
= 300V, I
= ± 15V
= -10V, V
10uS, V
= R
CE
Goff
GE
, I
CE
CE
=20V
GE
C
j
o
GE
=2.2 , , T
C, L
= 25(125)
= 600V, T
= 25V, f = 1MHz
GE
C
=1.5mA
R
= 15V; T
= 0V; T
=300V
= 100A
S
15V, Tvj = 125
= 15nH
Conditions
j
j
o
j
j
= 25(125)
= 25(125)
C
= 25(125)
= 25(125)
NPT IGBT Modules
SII100N06
o
o
o
o
o
C
C
C
C , Vcc = 360V
C
min.
2.5
4.5
3
T
C
= 25
-40...+125
-40...+125
130(150)
150(180)
1.25(1.2)
1.95(2.2) 2.45(-)
1.0(2.9)
1(1000)
o
7.7(13)
20(30)
25(26)
10(11)
-(3.2)
C , unless otherwise specified
0.03
typ.
450
0.28
1.0
5.5
4.3
0.4
150
40
S
irectifier
1.6(-)
max.
160
0.5
500
400
6.5
5
5
Units
K/W
K/W
m
Nm
Nm
nH
mJ
uC
mJ
nF
o
uA
nA
ns
ns
ns
ns
A
V
V
V
A
g
C
R