UPD5702 CEL [California Eastern Labs], UPD5702 Datasheet - Page 2

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UPD5702

Manufacturer Part Number
UPD5702
Description
NECs 2.4 GHz Si LD MOS POWER AMPLIFIER
Manufacturer
CEL [California Eastern Labs]
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
UPD5702TU-E2
Manufacturer:
SILICON
Quantity:
1 000
ABSOLUTE MAXIMUM RATINGS
(T
Notes:
1. Operation in excess of any one of these conditions may
2. T
TYPICAL PERFORMANCE CURVES
UPD5702TU
SYMBOLS
A
P
= 25°C unless otherwise specified)
result in permanent damage.
T
IN(MAX)
V
V
A
P
T
STG
T
DS
GS
= 25°C, mounted on 330 x 21 mm epoxy glass PWB.
D
A
j
30
25
20
15
10
5
0
-15
Supply Voltage 1
Supply Voltage 2
Power Dissipation
Operating Ambient Temp.
Storage Temp. Range
Maximum Input Level
Junction Temperature
ADJACENT CHANNEL POWER
OUTPUT POWER, GAIN AND
-10
PARAMETERS
Input Power, P
vs. INPUT POWER
-5
2
0
IN
(dBm)
Pout
Gain
Padj (-900 KHz)
Padj (-600 KHz)
Padj (+600 KHz)
Padj (+900 KHz)
UNITS
f = 1.90 GHz,
dBm
V
V
°C
°C
°C
P
W
DS
GS
V
V
IN
5
= 3.0 V,
= 2.0 V,
= -5 dB
1
-65 to +150
10
RATINGS
-40 to +85
-70
-60
-20
-30
-40
-50
-80
0.866
+150
+10
6.0
6.0
(T
A
= 25°C, f = 1.9 GHz, V
RECOMMENDED
OPERATING CONDITIONS
ORDERING INFORMATION
SYMBOLS
V
V
P
I
DS
GS
D
IN
GS
UPD5702TU-E2-A
PART NUMBER
= 2.0 V unless otherwise specified)
250
200
150
100
50
0
-15
Supply Voltage 1
Supply Voltage 2
Maximum Input Power
Drain Current
PARAMETERS
-10
Input Power, P
CIRCUIT CURRENT
vs. INPUT POWER
-5
IN
0
(dBm)
UNITS MIN TYP MAX
dBm
mA
QUANTITY
V
V
5
TBD
2.7
0.0
10
165
3.0
0.2
+5
3.6

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