h8s-2646 Renesas Electronics Corporation., h8s-2646 Datasheet - Page 752

• Manufacturer Part Number: h8s-2646
• Description: Renesas 16-bit Single-chip Microcomputer H8s Family/h8s/2600 Series
• Manufacturer: Renesas Electronics Corporation.

Section 20 ROM
20.13
Precautions concerning the use of on-board programming mode, the RAM emulation function, and
programmer mode are summarized below.
1. Use the specified voltages and timing for programming and erasing.
2. Powering on and off (see figures 20.26 to 20.28)
3. FWE application/disconnection (see figures 20.26 to 20.28)
Rev. 5.00 Sep 22, 2005 page 726 of 1136
REJ09B0257-0500
Applied voltages in excess of the rating can permanently damage the device. Use a PROM
programmer that supports the Renesas Technology microcomputer device type with 128-kbyte
on-chip flash memory (FZTAT256V3A).
Do not select the HN27C4096 setting for the PROM programmer, and only use the specified
socket adapter. Failure to observe these points may result in damage to the device.
Do not apply a high level to the FWE pin until V
before turning off V
When applying or disconnecting V
in the hardware protection state.
The power-on and power-off timing requirements should also be satisfied in the event of a
power failure and subsequent recovery.
FWE application should be carried out when MCU operation is in a stable condition. If MCU
operation is not stable, fix the FWE pin low and set the protection state.
The following points must be observed concerning FWE application and disconnection to
prevent unintentional programming or erasing of flash memory:
•
•
•
•
•
Apply FWE when the V
Apply FWE when oscillation has stabilized (after the elapse of the oscillation settling
time).
In boot mode, apply and disconnect FWE during a reset.
In user program mode, FWE can be switched between high and low level regardless of a
reset state.
FWE input can also be switched during execution of a program in flash memory.
Do not apply FWE if program runaway has occurred.
Disconnect FWE only when the SWE, ESU, PSU, EV, PV, P, and E bits in FLMCR1 are
cleared.
Make sure that the SWE, ESU, PSU, EV, PV, P, and E bits are not set by mistake when
applying or disconnecting FWE.
Flash Memory Programming and Erasing Precautions
CC
.
CC
voltage has stabilized within its rated voltage range.
CC
power, fix the FWE pin low and place the flash memory
CC
has stabilized. Also, drive the FWE pin low