MC33883DW/R2 MOTOROLA [Motorola, Inc], MC33883DW/R2 Datasheet - Page 11

• Manufacturer Part Number: MC33883DW/R2
• Description: H-Bridge Gate Driver IC
• Manufacturer: MOTOROLA [Motorola, Inc]

Turn-On
capacitor C
Where Q
for rise time.
MOTOROLA ANALOG INTEGRATED CIRCUIT DEVICE DATA
For turn-on, the current required to charge the gate source
V
GATE
GATE_HS
g
GATE_LS
is power MOSFET gate charge and t
iss
OFF
Flyback spike charges low-
Causes increased uncon-
trolled turn-on of low-side
side gate via C
I
in the specified time can be calculated as follows:
current I
rss
Driver Requirement:
Low Resistive Gate-
Source Path During
I
P
C
C
C
C
= Q
rss
iss
rss
iss
OFF-State
MOSFET.
rss
g
/t
up to 2.0 A.
r
= 80 nC/80 ns ≈ 1.0 A
rss
V
BAT
charge
Freescale Semiconductor, Inc.
L1
GATE_HS
GATE_LS
For More Information On This Product,
I
LOAD
OFF
Flyback spike pulls down
Sink Current Capability
Delays turn-off of high-
OFF-State. High Peak
high-side source V
Driver Requirement:
Low Resistive Gate-
Source Path During
Figure 5. OFF-State Driver Requirement
C
C
C
C
rss
r
APPLICATION REQUIREMENTS
iss
iss
rss
side MOSFET.
is peak current
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V
BAT
GS
L1
.
I
GATE_HS
LOAD
GATE_LS
Turn-Off
way as for turn-on, with the exception that peak current for fall
time, t
the MOSFET, various application-related switching scenarios
must be considered. These scenarios are presented in
Figure
path between gate and source is implemented during the OFF-
state.
Flyback spike charges low-
OFF
Delays turn-off of low-side
side gate via C
High Peak Sink Current
current I
The peak current for turn-off can be obtained in the same
In addition to the dynamic current required to turn off or on
Driver Requirement:
C
C
C
C
rss
iss
rss
iss
f
, is substituted for t
5. In order to withstand high dV/dt spikes, a low resistive
Capability
MOSFET.
rss
up to 2.0 A.
V
rss
BAT
I
P
charge
= Q
V
-V
GATE
L1
g
DRN
/t
f
r
I
= 80 nC/80 ns ≈ 1.0 A
:
LOAD
GATE_HS
GATE_LS
OFF
Causes increased uncon-
trolled turn-on of high-side
Flyback spike pulls down
high-side source V
Driver Requirement:
Low Resistive Gate-
Source Path During
C
C
C
C
iss
iss
rss
rss
OFF-State
MOSFET.
V
BAT
GS
L1
.
I
LOAD
33883
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