HYB3165165TL-50 SIEMENS [Siemens Semiconductor Group], HYB3165165TL-50 Datasheet
HYB3165165TL-50
Related parts for HYB3165165TL-50
HYB3165165TL-50 Summary of contents
Page 1
Dynamic RAM (4k & 8k Refresh, EDO-version) Preliminary Information 4 194 304 words by 16-bit organization • ˚C operating temperature • Fast access and cycle time • RAS access time (-50 version) ...
Page 2
This HYB3164(5)165 MBit dynamic RAM organized 4 194 304 x 16 bits. The device is fabricated in SIEMENS/IBM most advanced first generation 64Mbit CMOS silicon gate process technology. The circuit and process design allow this device to ...
Page 3
Pin 35 is A12 for HYB 3164165T(L) and N.C. for HYB 3165165T(L) Pin Configuration Semiconductor Group HYB3164(5)165T(L)-50/-60 P-TSOPII-54-1 (500 mil EDO-DRAM ...
Page 4
TRUTH TABLE FUNCTION RAS LCAS UCA Standby H L Read:Word Read:Lower Byte L L Read:Upper Byte Write:Word L (Early-Write) Write:Lower Byte L (Early-Write) Write:Upper Byte L (Early Write) Read-Modify- L Write Hyper Page Mode 1st L Read (Word) Cycle Hyper ...
Page 5
Block Diagram for HYB 3164165T(L) Semiconductor Group HYB3164(5)165T(L)-50/- EDO-DRAM 35 ...
Page 6
Block Diagram for HYB 3165165T(L) Semiconductor Group HYB3164(5)165T(L)-50/- EDO-DRAM 36 ...
Page 7
Absolute Maximum Ratings Operating temperature range.............................................................................................. ˚C Storage temperature range.........................................................................................– 150 ˚C Input/output voltage..................................................................................-0.5 to min (Vcc+0.5,4.6) V Power supply voltage....................................................................................................-0.5V to 4.6 V Power dissipation......................................................................................................................1.0 W Data out current (short circuit)..................................................................................................50 mA Note Stresses above ...
Page 8
DC Characteristics (cont’ ˚ Parameter Average Vcc supply current, during RAS-only refresh cycles: (RAS cycling: CAS = VIH: tRC = tRC min.) Average Vcc supply current, Hyper page ...
Page 9
AC Characteristics ˚ Parameter common parameters Random read or write cycle time RAS precharge time RAS pulse width CAS pulse width Row address setup time Row address hold ...
Page 10
AC Characteristics (cont’ ˚ Parameter Output buffer turn-off delay Output buffer turn-off delay from OE Data to CAS low delay Data to OE low delay CAS high to data ...
Page 11
AC Characteristics (cont’ ˚ Parameter OE pulse width OE hold time from CAS high WE pulse width to output disable at CAS high Output buffer turn-off delay from WE ...
Page 12
Notes: 1) All voltages are referenced to VSS. Vih may overshoot 0.2V for pulse widths of < 4ns with 3.3V. Vil may undershoot to -2.0V for pulse width < 4.0 ns with 3.3V. Pulse width measured at ...
Page 13
V IH RAS UCAS IH LCAS ASR V IH Row Address I/O (Inputs I/O (Outputs) V ...
Page 14
V IH RAS V IL UCAS V IH LCAS ASR V IH Row Address I/O (Inputs I/O (Outputs) V ...
Page 15
V IH RAS V IL UCAS V IH LCAS ASR V IH Row Address I/O (Inputs I/O (Outputs) V ...
Page 16
V IH RAS UCAS IH LCAS ASR V IH Address Row I/O (Inputs I/O (Outputs) V ...
Page 17
V IH RAS CRP V UCAS IH LCAS RAH t ASR V IH Address Row RAD I/O IH (Output) V ...
Page 18
V IH RAS CRP V UCAS IH LCAS RAH t ASR V IH Address Row RAD I/O IH (Output) V ...
Page 19
V IH RAS CRP V IH UCAS V IL LCAS t RAH t ASR V IH Address Row RAD I/O IH (Output) V ...
Page 20
V IH RAS CRP V IH UCAS V IL LCAS t RAH t ASR V IH Row Address Addr RAD t WCS ...
Page 21
V IH RAS CRP V IH UCAS V IL LCAS t RAH t ASR V IH Address Row RAD I/O IH (Input) V ...
Page 22
Hyper Page Mode (EDO) Read-Modify-Write Cycle Semiconductor Group HYB3164(5)165T(L)-50/- EDO-DRAM 52 WL17 ...
Page 23
V IH RAS UCAS IH LCAS ASR V IH Address I/O (Outputs “H” or “L” RAS Only Refresh Cycle Semiconductor Group t t RAS t RAH Row HI-Z ...
Page 24
V IH RAS RPC UCAS V IL LCAS OEZ CDD V IH I/O (Inputs ODD V OH I/O ...
Page 25
V IH RAS UCAS LCAS RAD t RAH t ASR V IH Address Row I/O (Inputs ...
Page 26
V IH RAS UCAS V IL LCAS t RAH t ASR V IH Address Row I/O (Input I/O (Output “H” or ...
Page 27
V IH RAS RPC UCAS V IL LCAS CDD V IH I/O (Inputs ODD t OEZ V OH I/O ...
Page 28
Read Cycle: RAS UCAS LCAS Address I/O (Inputs I/O (Outputs ...
Page 29
Package Outlines P-TSOPII-54-1 (500 mil) (Plastic Thin Small Outline Package Type II Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book “Package Information”. SMD = Surface Mounted Device Semiconductor Group HYB3164(5)165T(L)-50/- ...
Page 30
VAKAT ((60)) ...