M5M5256DFP-12VLL MITSUBISHI [Mitsubishi Electric Semiconductor], M5M5256DFP-12VLL Datasheet

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M5M5256DFP-12VLL

Manufacturer Part Number
M5M5256DFP-12VLL
Description
262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM
Manufacturer
MITSUBISHI [Mitsubishi Electric Semiconductor]
Datasheet
APPLICATION
PACKAGE
DESCRIPTION
FEATURE
organized as 32,768-words by 8-bits which is fabricated using
high-performance 3 polysilicon CMOS technology. The use of
resistive load NMOS cells and CMOS periphery results in a high
density and low power static RAM. Stand-by current is small
enough for battery back-up application. It is ideal for the memory
systems which require simple interface.
small outline package.Two types of devices are available,
M5M5256DVP(normal lead bend type package),
M5M5256DRV(reverse lead bend type package). Using both types of
devices, it becomes very easy to design a printed circuit board.
The M5M5256DFP,VP,RV is 262,144-bit CMOS static RAMs
Especially the M5M5256DVP,RV are packaged in a 28-pin thin
'97.4.7
•Single +2.7~3.6V power supply
•No clocks, no refresh
•Data-Hold on +2.0V power supply
•Directly TTL compatible : all inputs and outputs
•Three-state outputs : OR-tie capability
•/OE prevents data contention in the I/O bus
•Common Data I/O
•Battery backup capability
•Low stand-by current··········0.05µA(typ.)
M5M5256DFP,VP,RV-10VLL
M5M5256DFP,VP,RV-12VLL
M5M5256DFP,VP,RV-15VLL
M5M5256DFP,VP,RV-10VXL
M5M5256DFP,VP,RV-12VXL
M5M5256DFP,VP,RV-15VXL
M5M5256DFP
M5M5256DVP,RV : 28pin 8 X 13.4 mm
Small capacity memory units
Type
: 28 pin 450 mil SOP
M5M5256DFP,VP,RV -10VLL,-12VLL,-15VLL,
Access
100ns
120ns
150ns
100ns
120ns
150ns
(max)
time
Power supply current
(Vcc=3.6V)
Active
20mA
(max)
2
TSOP
MITSUBISHI
ELECTRIC
Stand-by
(Vcc=3.6V)
(Vcc=3.0V,
(Vcc=3.6V)
0.05µA
262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM
(max)
12µA
2.4µA
Typical)
25
24
23
22
22
23
28
27
26
24
25
26
27
7
6
PIN CONFIGURATION (TOP VIEW)
28
5
4
3
2
1
4 A6
5 A5
6 A4
7 A3
1 A14
2 A12
3 A7
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ1
DQ2
DQ3
GND
-10VXL,-12VXL,-15VXL
A11
A9
A8
A13
Vcc
A3
A4
A5
A6
A7
A12
A14
Vcc
A13
A8
A9
A11
/W
/OE
/OE
/W
Outline 28P2C-A (DVP)
Outline 28P2C-B (DRV)
10
11
12
13
14
4
5
6
7
8
9
1
2
3
Outline 28P2W-C (DFP)
M5M5256DRV
M5M5256DVP
MITSUBISHI LSIs
19
18 DQ7
17 DQ6
16 DQ5
15 DQ4
25 A8
24 A9
23 A11
22 /OE
28 Vcc
27 /W
26 A13
21 A10
20 /S
GND
DQ8 19
DQ7 18
DQ6 17
DQ5 16
GND
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ8
DQ8
DQ415
DQ3
DQ2
DQ1
A10
A10 21
A0
A2
A1
A0
A1
A2
/S
/S 20
10
11
12
13
14
15
16
17
18
19
20
21
14
13
12
11
10
8
9
9
8
1

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M5M5256DFP-12VLL Summary of contents

Page 1

... M5M5256DFP,VP,RV -10VLL,-12VLL,-15VLL, DESCRIPTION The M5M5256DFP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by current is small enough for battery back-up application ...

Page 2

... M5M5256DFP,VP,RV -10VLL,-12VLL,-15VLL, FUNCTION The operation mode of the M5M5256DP,FP,VP,RV is determined by a combination of the device control inputs /S, /W and /OE. Each mode is summarized in the function table. A write cycle is executed whenever the low level /W overlaps with the low level /S. The address must be set up before the write cycle and must be stable during the entire cycle ...

Page 3

... M5M5256DFP,VP,RV -10VLL,-12VLL,-15VLL, ABSOLUTE MAXIMUM RATINGS Symbol Parameter Supply voltage Vcc V Input voltage I Output voltage Power dissipation d Operating temperature T opr Storage temperature T stg * -3.0V in case Pulse width DC ELECTRICAL CHARACTERISTICS Symbol Parameter V High-level input voltage IH V Low-level input voltage IL V High-level output voltage 1 I ...

Page 4

... M5M5256DFP,VP,RV -10VLL,-12VLL,-15VLL, AC ELECTRICAL CHARACTERISTICS (1) MEASUREMENT CONDITIONS Input pulse level···················V =2.2V,V IH Input rise and fall time··········5ns Reference level· ...

Page 5

... M5M5256DFP,VP,RV -10VLL,-12VLL,-15VLL, (4) TIMING DIAGRAMS Read cycle A 0~14 /S (Note 3) /OE (Note "H" level Write cycle (/W control mode) A 0~14 /S (Note 3) / 1~8 (Note 3) -10VXL,-12VXL,-15VXL 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM ( ( (OE (OE) ...

Page 6

... M5M5256DFP,VP,RV -10VLL,-12VLL,-15VLL, Write cycle ( /S control mode (Note 3) DQ 1~8 Note 3 : Hatching indicates the state is "don't care" Writing is executed in overlap of /S and /W low goes low simultaneously with or prior to /S, the outputs remain in the high impedance state Don't apply inverted phase signal externally when DQ pin is output mode. ...

Page 7

... M5M5256DFP,VP,RV -10VLL,-12VLL,-15VLL, POWER DOWN CHARACTERISTICS (1) ELECTRICAL CHARACTERISTICS Symbol Parameter Vcc Power down supply voltage (PD) V Chip select input /S I (/S) Icc Power down supply current (PD) Note7: ICC (PD) = 1uA in case 25°C Note8: ICC (PD) = 0.2uA in case 25°C (2) TIMING REQUIREMENTS Symbol ...

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