2SK3205_06 TOSHIBA [Toshiba Semiconductor], 2SK3205_06 Datasheet

2SK3205_06

Manufacturer Part Number

2SK3205_06

Description

Silicon N Channel MOS Type Switching Regulator Applications DC−DC Converter, and Motor Drive Applications

Manufacturer

TOSHIBA [Toshiba Semiconductor]

Datasheet

1.2SK3205_06.pdf (3 pages)

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Switching Regulator Applications DC−DC Converter, and

Motor Drive Applications

Absolute Maximum Ratings

Thermal Characteristics

4 V gate drive

Low drain−source ON resistance

High forward transfer admittance

Low leakage current

Enhancement−mode

Drain−source voltage

Drain−gate voltage (R

Gate−source voltage

Drain current

Drain power dissipation (Tc = 25°C)

Single pulse avalanche energy

Avalanche current

Repetitive avalanche energy (Note 3)

Channel temperature

Storage temperature range

Note:

Thermal resistance, channel to case

Thermal resistance, channel to

ambient

Note 1: Please use devices on condition that the channel temperature is

Note 2: V

Note 3: Repetitive rating; Pulse width limited by maximum channel temperature.

This transistor is an electrostatic sensitive device.

Please handle with caution.

Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature, etc.)

may cause this product to decrease in the reliability significantly even if the

operating conditions (i.e. operating temperature/current/voltage, etc.) are

within the absolute maximum ratings. Please design the appropriate reliability

upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/Derating Concept and Methods) and individual reliability data (i.e.

reliability test report and estimated failure rate, etc).

below 150°C.

Characteristics

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L

= 50 V, T

Pulse (Note 1)

= 20 kΩ)

: I

: V

= 25°C (initial), L = 4.2 mH, I

(Note 1)

(Note 2)

DSS

= 0.8~2.0 V (V

= 100 μA (max) (V

(Ta = 25°C)

Symbol

th (ch−c)

th (ch−a)

: R

: |Y

DGR

GSS

DSS

stg

DS (ON)

2SK3205

| = 4.5 S (typ.)

= 10 V, I

= 0.36 Ω (typ.)

−55~150

Rating

6.25

Max

150

±20

150

125

= 150 V)

= 5 A, R

= 1 mA)

°C / W

Unit

°C

= 25 Ω

Weight: 0.36 g (typ.)

JEDEC

JEITA

TOSHIBA

JEDEC

JEITA

TOSHIBA

−π−MOSV)

2-7B1B

2-7B3B

SC-64

2006-11-20

―

2SK3205

—

Unit: mm

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2SK3205_06 Summary of contents

Page 1

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L Switching Regulator Applications DC−DC Converter, and Motor Drive Applications 4 V gate drive Low drain−source ON resistance High forward transfer admittance Low leakage current : I DSS Enhancement−mode : V ...

Page 2

Electrical Characteristics Characteristics Gate leakage current Drain cut−off current Drain−source breakdown voltage Gate threshold voltage Drain−source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn−on time Switching time Fall time Turn−off time Total gate ...

Page 3

RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to ...

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