2SK3301_06 TOSHIBA [Toshiba Semiconductor], 2SK3301_06 Datasheet

2SK3301_06

Manufacturer Part Number

2SK3301_06

Description

Silicon N Channel MOS Type Switching Regulatorand DC-DC Converter Applications

Manufacturer

TOSHIBA [Toshiba Semiconductor]

Datasheet

1.2SK3301_06.pdf (3 pages)

Current page: 1 of 3
Download datasheet (167Kb)

Switching Regulatorand DC-DC Converter Applications

•

Absolute Maximum Ratings

Thermal Characteristics

Low drain-source ON resistance: R

High forward transfer admittance: |Y

Low leakage current: I

Enhancement mode: V

Drain-source voltage

Drain-gate voltage (R

Gate-source voltage

Drain current

Drain power dissipation (Tc = 25°C)

Single pulse avalanche energy

Avalanche current

Repetitive avalanche energy (Note 3)

Channel temperature

Storage temperature range

Note:

Thermal resistance, channel to case

Thermal resistance, channel to ambient

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: V

Note 3: Repetitive rating: pulse width limited by max junction

This transistor is an electrostatic-sensitive device. Please handle with caution.

Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature,

etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage,

etc.) are within the absolute maximum ratings. Please design the

appropriate reliability upon reviewing the Toshiba Semiconductor

Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and

estimated failure rate, etc).

temperature

Characteristics

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIII)

= 1 A

= 90 V, T

Characteristics

= 20 kΩ)

DC (Note 1)

Pulse

DSS

= 25°C (initial), L = 257 mH, R

= 2.4~3.4 V (V

(Note 1)

(Note 2)

= 100 μA (max) (V

DS (ON)

(Ta = 25°C)

Symbol

DGR

GSS

DSS

| = 0.65 S (typ.)

stg

2SK3301

= 10 V, I

= 15 Ω (typ.)

Symbol

th (ch-c)

th (ch-a)

= 720 V)

−55~150

Rating

900

±30

140

150

2.0

= 1 mA)

= 25 Ω,

Max

6.25

125

°C/W

Unit

°C

Weight: 0.36 g (typ.)

JEDEC

JEITA

TOSHIBA

JEDEC

JEITA

TOSHIBA

2-7B1B

2-7J1B

SC-64

2006-11-10

―

2SK3301

Unit: mm

Related parts for 2SK3301_06

2SK3301_06 Summary of contents

Page 1

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIII) Switching Regulatorand DC-DC Converter Applications • Low drain-source ON resistance: R • High forward transfer admittance: |Y • Low leakage current 100 μA (max) (V DSS • Enhancement ...

Page 2

Electrical Characteristics Characteristics Gate leakage current Gate-source breakdown voltage Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off ...

Page 3

RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to ...

Related keywords

2SK3301_06 datasheet
2SK3301_06 data sheet
2SK3301_06 pdf datasheet
2SK3301_06 component
2SK3301_06 part
2SK3301_06 distributor
2SK3301_06 RoHS
2SK3301_06 datasheet download