2SK370_07 TOSHIBA [Toshiba Semiconductor], 2SK370_07 Datasheet
2SK370_07
Manufacturer Part Number
2SK370_07
Description
Silicon N Channel Junction Type For Low Noise Audio Amplifier Applications
Manufacturer
TOSHIBA [Toshiba Semiconductor]
Datasheet
1.2SK370_07.pdf
(5 pages)
For Low Noise Audio Amplifier Applications
•
•
•
•
•
•
Absolute Maximum Ratings
Electrical Characteristics
Suitable for use as first stage for equalizer and MC head amplifiers.
High |Y
High breakdown voltage: V
High input impedance: I
Complementary to 2SJ108
Small package
Gate-drain voltage
Gate current
Drain power dissipation
Junction temperature
Storage temperature range
Note:
Gate cut-off current
Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Noise figure
Note: I
DSS
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
fs
|: |Y
Characteristics
Characteristics
classification GR: 2.6~6.5 mA, BL: 6.0~12 mA, V: 10~20 mA
fs
| = 22 ms (typ.) (V
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
GSS
GDS
= −1 nA (max) (V
(Ta = 25°C)
= −40 V
(Ta = 25°C)
DS
V
V
Symbol
Symbol
GS (OFF)
(BR) GDS
NF (1)
NF (2)
V
⎪Y
I
I
C
T
C
GSS
= 10 V, V
DSS
P
GDS
I
T
stg
rss
G
iss
fs
D
j
(Note)
⎪
2SK370
GS
V
V
V
V
V
I
V
V
V
f = 10 Hz
V
f = 1 kHz
GS
DSS
GS
DS
DS
DS
DS
DS
DG
DS
DS
= −30 V)
−55~125
= 0, I
Rating
= 0, I
= 10 V, V
= 10 V, I
= 10 V, V
= 10 V, V
= 10 V, I
= 10 V, I
= −30 V, V
= 10 V, I
= 3 mA
−40
200
125
10
1
G
DSS
= −100 μA
Test Condition
D
D
D
D
GS
GS
GS
= 0.1 μA
= 1.0 mA, R
= 1.0 mA, R
DS
= 0, f = 1 MHz
= 3 mA)
= 0
= 0, f = 1 kHz,
= 0, f = 1 MHz
= 0
Unit
mW
mA
°C
°C
V
G
G
= 1 kΩ,
= 1 kΩ,
Weight: 0.13 g (typ.)
JEDEC
JEITA
TOSHIBA
−0.2
Min
−40
2.6
⎯
⎯
⎯
⎯
⎯
8
Typ.
1.0
0.5
22
30
⎯
⎯
⎯
⎯
6
2-4E1C
2007-11-01
―
―
−1.0
−1.5
Max
20
10
⎯
⎯
⎯
⎯
2
2SK370
Unit: mm
Unit
mA
mS
nA
pF
pF
dB
V
V
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2SK370_07 Summary of contents
Page 1
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type For Low Noise Audio Amplifier Applications • Suitable for use as first stage for equalizer and MC head amplifiers. • High | (typ ...
Page 2
2 2SK370 2007-11-01 ...
Page 3
3 2SK370 2007-11-01 ...
Page 4
4 2SK370 2007-11-01 ...
Page 5
RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to ...