2SA1358_07 TOSHIBA [Toshiba Semiconductor], 2SA1358_07 Datasheet

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2SA1358_07

Manufacturer Part Number
2SA1358_07
Description
Audio Frequency Power Amplifier Applications
Manufacturer
TOSHIBA [Toshiba Semiconductor]
Datasheet
1.2SA1358_07.pdf (4 pages)
Audio Frequency Power Amplifier Applications
•
•
•
Absolute Maximum Ratings
Complementary to 2SC3421
Suitable for driver of 60 to 80 watts
High breakdown voltage
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Characteristics
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
Ta = 25°C
Tc = 25°C
(Tc = 25°C)
Symbol
V
V
V
T
P
CBO
CEO
EBO
I
I
T
stg
C
B
C
2SA1358
j
−55 to 150
Rating
−120
−120
−100
150
1.5
−5
−1
10
1
Unit
mA
°C
°C
W
V
V
V
A
Weight: 0.82 g (typ.)
JEDEC
JEITA
TOSHIBA
2-8H1A
2006-11-09
―
―
2SA1358
Unit: mm

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2SA1358_07 Summary of contents

Page 1

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Audio Frequency Power Amplifier Applications • Complementary to 2SC3421 • Suitable for driver watts • High breakdown voltage Absolute Maximum Ratings Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage ...

Page 2

Electrical Characteristics Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage Emitter-base breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Note: h classification 160, Y: 120 to 240 FE ...

Page 3

I – −1200 Common emitter Tc = 25°C −15 −1000 −10 −800 −7 −600 −5 −4 −400 −3 −2 −200 − −2 −4 −6 −8 −10 Collector-emitter voltage V CE ...

Page 4

RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to ...

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