2SA1384_07 TOSHIBA [Toshiba Semiconductor], 2SA1384_07 Datasheet
2SA1384_07
Related parts for 2SA1384_07
2SA1384_07 Summary of contents
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TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT process) High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications • High voltage −300 V, V CBO • Low saturation voltage ...
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Electrical Characteristics Characteristics Collector cut-off current Emitter cut-off current Collector-base breakdown voltage Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Note 3: h classification 90 ...
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I – (low voltage region) −100 Common −10 −3 −5 emitter Ta = 25°C −2 −80 −1 −0.8 −60 −0.6 −0.4 −40 −0.3 −0.2 − −0 −2 −4 −6 −8 −10 ...
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500 300 Common emitter Ta = 25° −10 V 100 −0.1 −0.3 −1 −3 −10 Collector current I (mA – (sat) C −5 −3 Common ...
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P – 1.2 (1) Mounted on ceramic substrate ① 2 × 0.8 t) (250 mm 1.0 (2) No heat sink 0.8 0.6 ② 0.4 0 100 120 Ambient temperature Ta (°C) −500 ...
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RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to ...