2SA1426_09 TOSHIBA [Toshiba Semiconductor], 2SA1426_09 Datasheet
2SA1426_09
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2SA1426_09 Summary of contents
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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Audio Power Amplifier Applications • High 100 to 320 FE FE • 1-W output applications • Complementary to 2SC3666. Absolute Maximum Ratings Characteristics Collector-base voltage Collector-emitter voltage Emitter-base ...
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Electrical Characteristics Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Note 2: h classification O: 100 to 200, Y: 160 to 320 FE (1) Marking ...
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I – −1000 Common emitter Ta = 25°C −8 −800 −600 −400 −200 0 0 −1 −2 −3 −4 Collector-emitter voltage – (sat) C −2 Common emitter − ...
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RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and ...