2SA1431_06 TOSHIBA [Toshiba Semiconductor], 2SA1431_06 Datasheet
2SA1431_06
Manufacturer Part Number
2SA1431_06
Description
Strobe Flash Applications Medium Power Amplifier Applications
Manufacturer
TOSHIBA [Toshiba Semiconductor]
Datasheet
1.2SA1431_06.pdf
(4 pages)
Strobe Flash Applications
Medium Power Amplifier Applications
•
•
Absolute Maximum Ratings
High DC current gain and excellent h
: h
: h
Low saturation voltage: V
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Note 1: Pulse width = 10 ms (max), duty cycle = 30% (max)
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
FE(1)
FE(2)
= 100 to 320 (V
= 70 (min) (V
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Characteristics
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
CE
DC
Pulsed
CE
(I
= −2 V, I
C
(Note 1)
CE (sat)
= −2 V, I
= −4 A, I
C
= −1.0 V (max)
(Ta = 25°C)
C
= −4 A)
B
Symbol
= −0.5 A)
V
V
FE
V
T
= −0.1 A)
I
P
CBO
CEO
EBO
I
CP
I
T
stg
C
B
C
2SA1431
j
linearity
−55 to 150
Rating
1000
−0.5
−35
−20
150
−8
−5
−8
1
Unit
mW
°C
°C
V
V
V
A
A
Weight: 0.2 g (typ.)
JEDEC
JEITA
TOSHIBA
2-7D101A
2006-11-09
―
―
2SA1431
Unit: mm
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2SA1431_06 Summary of contents
Page 1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Strobe Flash Applications Medium Power Amplifier Applications • High DC current gain and excellent 100 to 320 (V = − FE( ...
Page 2
Electrical Characteristics Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage Emitter-base breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Note 3: h classification O: 100 to 200, Y: 160 to 320 ...
Page 3
I – −8 −200 Common emitter −150 Ta = 25°C −100 −6 −70 −50 −4 −30 − −10 mA − Collector-emitter voltage – ...
Page 4
RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to ...