2SC3113_03 TOSHIBA [Toshiba Semiconductor], 2SC3113_03 Datasheet
2SC3113_03
Manufacturer Part Number
2SC3113_03
Description
For Audio Amplifier and Switching Applications
Manufacturer
TOSHIBA [Toshiba Semiconductor]
Datasheet
1.2SC3113_03.pdf
(4 pages)
For Audio Amplifier and Switching Applications
·
·
·
·
Maximum Ratings
Electrical Characteristics
High DC current gain
High breakdown voltage: V
High collector current: I
Small package
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
Note: h
FE
Characteristics
Characteristics
classification A: 600~1800, B: 1200~3600
:
(Ta = = = = 25°C)
h
C
FE
= 150 mA (max)
TOSHIBA Transistor Silicon NPN Epitaxial Type
CEO
= 600~3600
(Ta = = = = 25°C)
= 50 V
V
Symbol
Symbol
NF (1)
NF (2)
V
V
V
CE (sat)
I
I
T
CBO
h
C
EBO
P
CBO
CEO
EBO
I
I
T
f
stg
FE
C
B
T
ob
C
2SC3113
j
(Note)
V
V
V
I
V
V
V
R
V
R
C
CB
EB
CE
CE
CB
CE
CE
G
G
= 100 mA, I
-55~125
= 10 kW
= 10 kW
Rating
= 5 V, I
= 50 V, I
= 6 V, I
= 10 V, I
= 10 V, I
= 6 V, I
= 6 V, I
150
200
125
50
50
30
5
1
C
C
C
C
Test Condition
E
C
E
= 0
= 2 mA
= 0.1 mA, f = 100 Hz,
= 0.1 mA, f = 1 kHz,
B
= 0
= 10 mA
= 0, f = 1 MHz
= 10 mA
Unit
mW
mA
mA
°C
°C
V
V
V
Weight: 0.13 g (typ.)
JEDEC
JEITA
TOSHIBA
Min
600
100
¾
¾
¾
¾
¾
¾
Typ.
0.12
250
3.5
0.5
0.3
¾
¾
¾
2-4E1A
2003-03-25
3600
2SC3113
―
―
0.25
Max
0.1
0.1
¾
¾
¾
¾
Unit: mm
MHz
Unit
mA
mA
pF
dB
V
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2SC3113_03 Summary of contents
Page 1
TOSHIBA Transistor Silicon NPN Epitaxial Type For Audio Amplifier and Switching Applications · High DC current gain h = 600~3600 : FE High breakdown voltage: V · CEO High collector current 150 mA (max) · C Small package ...
Page 2
2 2SC3113 2003-03-25 ...
Page 3
3 2SC3113 2003-03-25 ...
Page 4
RESTRICTIONS ON PRODUCT USE · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress ...