SIB415DK VISHAY [Vishay Siliconix], SIB415DK Datasheet

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SIB415DK

Manufacturer Part Number
SIB415DK
Description
P-Channel 30-V (D-S) MOSFET
Manufacturer
VISHAY [Vishay Siliconix]
Datasheet

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SIB415DK-T1-GE3
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CHARACTERISTICS
DESCRIPTION
SUBCIRCUIT MODEL SCHEMATIC
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate
data sheet of the same number for guaranteed specification limits.
Document Number: 74873
S-71023Rev. A, 14-May-07
• P-Channel Vertical DMOS
• Macro Model (Subcircuit Model)
• Level 3 MOS
The attached spice model describes the typical electrical
characteristics of the p-channel vertical DMOS.
model is extracted and optimized over the −55 to 125°C
temperature ranges under the pulsed 0-V to 5-V gate drive. The
saturated output impedance is best fit at the gate bias near the
threshold voltage.
P-Channel 30-V (D-S) MOSFET
The subcircuit
SPICE Device Model SiB415DK
• Apply for both Linear and Switching Application
• Accurate over the −55 to 125°C Temperature Range
• Model the Gate Charge, Transient, and Diode Reverse Recovery
A novel gate-to-drain feedback capacitance network is used to model
the gate charge characteristics while avoiding convergence difficulties
of the switched C
to provide a best fit to the measured electrical data and are not
intended as an exact physical interpretation of the device.
Characteristics
gd
model. All model parameter values are optimized
Vishay Siliconix
www.vishay.com
1

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SIB415DK Summary of contents

Page 1

... Document Number: 74873 S-71023Rev. A, 14-May-07 SPICE Device Model SiB415DK • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range • Model the Gate Charge, Transient, and Diode Reverse Recovery ...

Page 2

... SPICE Device Model SiB415DK Vishay Siliconix SPECIFICATIONS (T = 25°C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge ...

Page 3

... COMPARISON OF MODEL WITH MEASURED DATA (T Document Number: 74873 S-71023Rev. A, 14-May-07 SPICE Device Model SiB415DK Vishay Siliconix =25°C UNLESS OTHERWISE NOTED) J www.vishay.com 3 ...

Page 4

All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or ...

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