SUD50P04-40P-E3 VISHAY [Vishay Siliconix], SUD50P04-40P-E3 Datasheet

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SUD50P04-40P-E3

Manufacturer Part Number
SUD50P04-40P-E3
Description
P-Channel 40-V (D-S) MOSFET
Manufacturer
VISHAY [Vishay Siliconix]
Datasheet
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
Document Number: 69731
S-80109-Rev. B, 21-Jan-08
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case
V
DS
- 40
(V)
SUD50P04-40P-E3 (Lead (Pb)-free)
Ordering Information:
0.050 at V
0.040 at V
G
Top View
TO-252
r
D
DS(on)
S
GS
GS
J
(Ω)
= - 4.5 V
= - 10 V
= 150 °C)
b
Drain Connected to Tab
P-Channel 40-V (D-S) MOSFET
I
D
- 8
- 8
(A)
a
A
= 25 °C, unless otherwise noted
Q
Steady State
Steady State
17 nC
g
L = 0.1 mH
T
T
T
T
T
T
T
T
T
T
C
C
A
A
C
A
C
C
A
A
(Typ.)
New Product
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• TrenchFET
• 100 % UIS Tested
• Backlight Inverter for LCD Display
• Full Bridge DC/DC Converter
Symbol
Symbol
T
J
R
R
V
V
E
I
I
P
, T
DM
I
I
AS
thJC
GS
thJA
DS
AS
D
S
D
stg
®
Power MOSFET
Typical
4.3
43
G
P-Channel MOSFET
- 55 to 150
- 4.8
- 2.0
11.25
Limit
± 20
15.3
2.4
1.5
- 40
- 30
- 8
- 8
- 6
- 8
15
24
a
a
b
a
b
b
b
b
D
S
SUD50P04-40P
Maximum
5.2
52
Vishay Siliconix
www.vishay.com
°C/W
Unit
Unit
°C
W
mJ
V
A
RoHS
COMPLIANT
1

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SUD50P04-40P-E3 Summary of contents

Page 1

... 4 TO-252 Drain Connected to Tab Top View Ordering Information: SUD50P04-40P-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Avalanche Energy ...

Page 2

... SUD50P04-40P Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... Document Number: 69731 S-80109-Rev. B, 21-Jan-08 New Product = 10 thru 1.5 2.0 2.5 2500 2000 1500 1000 500 1.8 1.6 1 1.2 DS 1.0 0.8 0 SUD50P04-40P Vishay Siliconix ° 125 ° ° 0.0 0.8 1.6 2.4 3 Gate-to-Source Voltage (V) GS Transfer Characteristics C iss C oss ...

Page 4

... SUD50P04-40P Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 T = 150 ° 0.0 0.3 0.6 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.7 0 0.3 0.1 - 0 Temperature (°C) J Threshold Voltage 120 0.01 0.1 Time (s) Single Pulse Power, Junction-to-Case www ...

Page 5

... It is used to determine the current rating, when this rating falls 125 150 175 below the package limit. SUD50P04-40P Vishay Siliconix 100 ...

Page 6

... SUD50P04-40P Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www ...

Page 7

All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or ...

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