2SK2312_02 TOSHIBA [Toshiba Semiconductor], 2SK2312_02 Datasheet
2SK2312_02
Manufacturer Part Number
2SK2312_02
Description
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−?-MOSV)
Manufacturer
TOSHIBA [Toshiba Semiconductor]
Datasheet
1.2SK2312_02.pdf
(6 pages)
Chopper Regulator, DC−DC Converter and Motor Drive
Applications
l 4 V gate drive
l Low drain−source ON resistance
l High forward transfer admittance
l Low leakage current
l Enhancement−mode
Maximum Ratings
Thermal Characteristics
Drain−source voltage
Drain−gate voltage (R
Gate−source voltage
Drain current
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: V
Note 3: Repetitive rating; Pulse width limited by maximum channel temperature.
This transistor is an electrostatic sensitive device.
Please handle with caution.
DD
Characteristics
Characteristics
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L
= 25 V, T
GS
Pulse (Note 1)
DC (Note 1)
= 20 kΩ)
ch
(Ta = 25°C)
= 25°C (initial), L = 471 µH, R
(Note 2)
: I
: V
DSS
th
= 0.8~2.0 V (V
= 100 µA (max) (V
R
R
Symbol
Symbol
th (ch−c)
th (ch−a)
: R
: |Y
V
V
V
E
E
T
I
I
T
P
DGR
GSS
DSS
I
DP
AR
AS
AR
stg
D
ch
D
DS (ON)
2SK2312
fs
| = 40 S (typ.)
DS
= 13 mΩ (typ.)
= 10 V, I
−55~150
Rating
DS
2.78
62.5
Max
±20
180
701
150
4.5
G
60
60
45
45
45
1
= 60 V)
= 25 Ω, I
D
= 1 mA)
AR
°C / W
°C / W
Unit
Unit
mJ
mJ
°C
°C
W
V
V
V
A
A
A
= 45 A
Weight: 1.9 g (typ.)
JEDEC
JEITA
TOSHIBA
2
−π−MOSV)
2-10R1B
SC-67
2002-02-06
2SK2312
―
Unit: mm
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2SK2312_02 Summary of contents
Page 1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L Chopper Regulator, DC−DC Converter and Motor Drive Applications gate drive l Low drain−source ON resistance l High forward transfer admittance l Low leakage current : I DSS ...
Page 2
Electrical Characteristics Characteristics Gate leakage current Drain cut−off current Drain−source breakdown voltage Gate threshold voltage Drain−source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn−on time Switching time Fall time Turn−off time Total gate ...
Page 3
3 2SK2312 2002-02-06 ...
Page 4
4 2SK2312 2002-02-06 ...
Page 5
Ω 471 µ 2SK2312 1 B æ VDSS ö = × L × × ç ÷ VDSS DD è ø ...
Page 6
RESTRICTIONS ON PRODUCT USE · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress ...